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5SGF40L4502

型号：

5SGF40L4502

描述：

不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

344 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
VT0  
=
=
4500 V  
4000 A  
Asymmetric Gate turn-off  
Thyristor  
= 25×103 A  
=
=
=
1.2 V  
0.65  
5SGF 40L4502  
rT  
mΩ  
2800 V  
VDclink  
Doc. No. 5SYA1209-04 Jan. 03  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Annular gate electrode  
• Industry standard housing  
• Cosmic radiation withstand rating  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
4500  
Unit  
V
Repetitive peak off-state  
VDRM  
VGR ≥ 2 V  
voltage  
Repetitive peak reverse  
voltage  
VRRM  
17  
V
V
Permanent DC voltage for VDclink  
Ambient cosmic radiation at sea level  
in open air.  
2800  
100 FIT failure rate  
Characteristic values  
Parameter  
Symbol Conditions  
max  
Unit  
Repetitive peak off-state  
IDRM  
100  
mA  
VD = VDRM, VGR ≥ 2 V  
current  
Repetitive peak reverse  
current  
IRRM  
50  
mA  
VR = VRRM, RGK = ∞ Ω  
Mechanical data  
Maximum rated values 1)  
Parameter  
Mounting force  
Characteristic values  
Parameter  
Pole-piece diameter  
Housing thickness  
Weight  
Symbol Conditions  
Fm  
min  
36  
typ  
40  
max  
44  
Unit  
kN  
Symbol Conditions  
min  
typ  
75  
26  
max  
Unit  
mm  
mm  
kg  
Dp  
± 0.1 mm  
H
± 0.5 mm  
m
1.5  
Surface creepage distance Ds  
Air strike distance Da  
Anode to Gate  
Anode to Gate  
33  
14  
mm  
mm  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SGF 40L4502  
GTO Data  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
ITAVM Half sine wave, TC = 85 °C  
min  
typ  
max  
1180  
Unit  
A
Max. average on-state  
current  
Max. RMS on-state current ITRMS  
1850  
A
A
Max. peak non-repetitive  
ITSM  
tp = 10 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
25×103  
surge current  
Limiting load integral  
I2t  
3.1×106 A2s  
40×103  
Max. peak non-repetitive  
ITSM  
tp = 1 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
A
surge current  
Limiting load integral  
Characteristic values  
Parameter  
I2t  
800×103 A2s  
Symbol Conditions  
min  
min  
typ  
max  
3.8  
1.2  
0.65  
100  
Unit  
V
V
mΩ  
A
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 4000 A, Tvj = 125°C  
Tvj = 125°C  
IT = 400...5000 A  
IH  
Tvj = 25°C  
Turn-on switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
diT/dtcr  
typ  
typ  
max  
500  
Unit  
A/µs  
Critical rate of rise of on-  
f = 200 Hz  
f = 1 Hz  
Tvj = 125°C,  
state current  
IT = 4000 A, IGM = 50 A,  
Critical rate of rise of on-  
state current  
Min. on-time  
Characteristic values  
Parameter  
diT/dtcr  
ton  
1000  
A/µs  
µs  
diG/dt = 40 A/µs  
100  
Symbol Conditions  
min  
max  
2.5  
5
Unit  
µs  
µs  
J
Turn-on delay time  
td  
VD = 0.5 VDRM, Tvj = 125 °C  
IT = 4000 A, di/dt = 300 A/µs,  
Rise time  
tr  
IGM = 50 A, diG/dt = 40 A/µs, CS = 6  
Turn-on energy per pulse  
Eon  
3
µF, RS = 5 Ω  
Turn-off switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
ITGQM  
min  
typ  
typ  
max  
4000  
Unit  
A
Max. controllable turn-off  
V
DM ≤ VDRM, diGQ/dt = 40 A/µs,  
current  
CS = 6 µF, LS ≤ 0.2 µH  
Min. off-time  
Characteristic values  
Parameter  
Storage time  
Fall time  
Turn-on energy per pulse  
Peak turn-off gate current  
toff  
Symbol Conditions  
100  
µs  
min  
max  
25  
3
10  
1100  
Unit  
µs  
µs  
J
tS  
tf  
Eoff  
IGQM  
VD = 0.5 VDRM, Tvj = 125 °C  
DM ≤ VDRM, diGQ/dt = 40 A/µs,  
ITGQ = ITGQM  
RS = 5Ω, CS = 6 µF, LS = 0.2 µH  
V
,
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 2 of 9  
5SGF 40L4502  
Gate  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
VGRM  
min  
min  
typ  
max  
17  
Unit  
V
Repetetive peak reverse  
voltage  
Repetetive peak reverse  
current  
IGRM  
20  
mA  
VGR = VGRM  
Characteristic values  
Parameter  
Symbol Conditions  
typ  
1.2  
4
max  
Unit  
V
A
Gate trigger voltage  
Gate trigger current  
VGT  
IGT  
Tvj = 25°C,  
VD = 24 V, RA = 0.1 Ω  
Thermal  
Maximum rated values 1)  
Parameter  
Junction operating temperature  
Storage temperature range  
Characteristic values  
Parameter  
Symbol Conditions  
min  
-40  
-40  
typ  
typ  
max  
125  
125  
Unit  
°C  
°C  
Tvj  
Tstg  
Symbol Conditions  
min  
max  
11  
20  
25  
6
Unit  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
Thermal resistance junction to case  
Rth(jc) Double side cooled  
Rth(jc)A Anode side cooled  
Rth(jc)C Cathode side cooled  
Rth(ch) Single side cooled  
Rth(ch) Double side cooled  
Thermal resistance case to heatsink  
(Double side cooled)  
3
Analytical function for transient thermal  
impedance:  
n
(t) = åR  
Z
thJC  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
7.766  
0.5764  
1.728  
0.1258  
1.064  
0.0128 0.0031  
0.450  
τi(s)  
Fig. 1 Transient thermal impedance, junction to  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 3 of 9  
5SGF 40L4502  
Fig. 2 On-state characteristics.  
Fig. 3 Average on-state power dissipation vs.  
average on-state current.  
Fig. 4 Surge current and fusing integral vs. pulse  
width.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 4 of 9  
5SGF 40L4502  
Fig. 5 Forward blocking voltage vs. gate-cathode  
Fig. 6 Static dv/dt capability: Forward blocking  
resistance.  
voltage vs. neg. gate voltage or gate cathode  
resistance.  
Fig. 7 Forward gate current vs. forard gate voltage.  
Fig. 8 Gate trigger current vs. junction temperature  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 5 of 9  
5SGF 40L4502  
Fig. 9 Turn-on energy per pulse vs. on-state current  
Fig. 10 Turn-on energy per pulse vs. on.-state current  
and turn-on voltage.  
and current rise rate  
Common Test conditions for figures 9, 10 and 11:  
diG/dt  
CS  
= 40 A/µs  
= 6 µF  
RS  
= 5 Ω  
Tj  
= 125 °C  
Definition of Turn-on energy:  
20µs  
Eon =  
(t = 0, IG = 0.1⋅IGM )  
òVD ⋅ITdt  
0
Common Test conditions for figures 12, 13 and 15:  
Definition of Turn-off energy:  
40µs  
E
off  
=
D
⋅ I  
T
dt ( t = 0, I = 0.9 ⋅ ITGQ )  
T
òV  
0
Fig. 11 Turn-on energy per pulse vs. on-state current  
and turn-on voltage.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 6 of 9  
5SGF 40L4502  
Fig. 12 Turn-off energy per pulse vs. turn-off current  
and peak turn-off voltage. Extracted gate  
charge vs. turn-off current.  
Fig. 13 Turn-off energy per pulse vs. turn-off current  
and snubber capacitance.  
Fig. 14 Required snubber capacitor vs. max  
Fig. 15 Turn-off energy per pulse, storage time and  
peak turn-off gate current vs. junction  
temperature.  
allowable turn-off current.  
IGQM [A]  
I
GQM [A]  
ts [s]  
ts [s]  
50  
1200  
1100  
1000  
900  
60  
50  
40  
30  
20  
10  
0
1200  
1000  
800  
600  
400  
200  
0
Preliminary Data  
45  
40  
35  
30  
25  
20  
15  
10  
5
IGQM  
Preliminary Data  
IGQM  
tS  
Conditions:  
ITGQ = 4000 A  
Tj = 125 °C  
tS  
800  
Conditions:  
µ
diGQ/dt =40 A/ s  
Tj = 125 °C  
0
700  
0
10  
20  
30  
40  
50  
60  
0
500  
1000 1500 2000 2500 3000 3500 4000  
ITGQ [A]  
µ
diGQ/dt [A/ s]  
Fig. 16 Storage time and peak turn-off gate current  
Fig. 17 Storage time and peak turn-off gate current  
vs. neg. gate current rise rate.  
vs. turn-off current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 7 of 9  
5SGF 40L4502  
Fig. 18 General current and voltage waveforms with GTO-specific symbols.  
Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1209-04 Jan. 03  
page 8 of 9  
5SGF 40L4502  
The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static losses designed to  
retro-fit all former 4 kA GTOs of the same voltage. It offers optimal trade-off between on-state and switching  
losses and is encapsulated in an industry-standard press pack housing 120 mm wide and 26 mm thick.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1209-04 Jan. 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
厂商 型号 描述 页数 下载

ABB

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ETC

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ETC

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ABB

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