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5SGF30J4502

型号：

5SGF30J4502

描述：

栅极关断晶闸管[ Gate turn-off Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

304 K

下载PDF手册
VDRM = 4500 V  
ITGQM = 3000 A  
Gate turn-off Thyristor  
ITSM  
VT0  
rT  
=
=
=
24 kA  
1.80 V  
5SGF 30J4502  
0.70  
mΩ  
PRELIMINARY  
VDClin = 3000 V  
Doc. No. 5SYA 1211-04 Aug. 2000  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Annular gate electrode  
• Industry standard housing  
• Cosmic radiation withstand rating  
The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and  
static losses designed to retro-fit all former 3 kA GTOs of the same voltage. It offers  
optimal trade-off between on-state and switching losses and is encapsulated in an  
industry-standard press pack housing 108 mm wide and 26 mm thick.  
Blocking  
VDRM  
VRRM  
IDRM  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Repetitive peak off-state current  
Repetitive peak reverse current  
4500 V  
17 V  
V
GR ≥ 2V  
100 mA VD = VDRM  
50 mA VR = VRRM  
≤
≤
VGR ≥ 2V  
IRRM  
RGK = ∞  
VDClink Permanent DC voltage for 100  
FIT failure rate  
3000 V  
-40 ≤ Tj ≤ 125 °C. Ambient cosmic  
radiation at sea level in open air.  
Mechanical data (see Fig. 19)  
Fm  
min.  
28 kN  
38 kN  
Mounting force  
max.  
A
Acceleration:  
50 m/s2  
200 m/s2  
Device unclamped  
Device clamped  
M
Weight  
1.3 kg  
33 mm  
15 mm  
DS  
Da  
Surface creepage distance  
Air strike distance  
≥
≥
ABB Semiconductors AG reserves the right to change specifications without notice.  
5SGF 30J4502  
GTO Data  
On-state  
ITAVM  
ITRMS  
ITSM  
Max. average on-state current  
960 A  
1510 A  
24 kA  
40 kA  
Half sine wave, TC = 85 °C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
tP  
tP  
tP  
=
=
=
10 ms Tj = 125°C  
1 ms After surge:  
I2t  
Limiting load integral  
A2s  
10 ms VD = VR = 0V  
2.88 106  
0.80 106  
A2s  
tP  
IT  
=
=
1 ms  
VT  
VT0  
rT  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
3.90 V  
1.80 V  
0.70  
3000 A  
IT = 400 - 4000 A Tj = 125 °C  
mΩ  
IH  
100 A  
Tj = 25 °C  
Gate  
VGT  
Gate trigger voltage  
Gate trigger current  
1.2 V  
2.5 A  
17 V  
VD  
RA  
= 24 V  
Tj = 25 °C  
IGT  
=
0.1 Ω  
VGRM Repetitive peak reverse voltage  
IGRM Repetitive peak reverse current  
20 mA  
VGR = VGRM  
Turn-on switching  
di/dtcrit Max. rate of rise of on-state  
500 A/µs f = 200Hz IT = 3000 A, Tj = 125 °C  
1000 A/µs f = 1Hz IGM = 25 A, diG/dt = 20 A/µs  
0.5 VDRM Tj 125 °C  
di/dt = 300 A/µs  
diG/dt = 20 A/µs  
current  
td  
Delay time  
2.5 µs  
5.0 µs  
VD  
IT  
=
=
=
=
=
tr  
Rise time  
3000 A  
25 A  
ton(min)  
Eon  
Min. on-time  
100 µs  
2.50 Ws  
IGM  
CS  
Turn-on energy per pulse  
3 µF RS  
=
5
Ω
Turn-off switching  
ITGQM  
Max controllable turn-off  
3000 A  
VDM = VDRM  
CS = 3 µF  
diGQ/dt = 40 A/µs  
current  
LS  
0.2 µH  
VDRM  
≤
ts  
Storage time  
25.0 µs  
3.0 µs  
VD = ½ VDRM VDM  
Tj  
ITGQ = ITGQM  
=
tf  
Fall time  
=
125 °C diGQ/dt =  
40 A/µs  
toff(min)  
Eoff  
IGQM  
Min. off-time  
100 µs  
10.0 Ws  
800 A  
Turn-off energy per pulse  
Peak turn-off gate current  
CS  
LS  
=
3 µF RS  
0.2 µH  
=
5
Ω
≤
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 2 of 9  
5SGF 30J4502  
Thermal  
Tj  
Storage and operating  
-40...125°C  
junction temperature range  
RthJC  
Thermal resistance  
junction to case  
22 K/kW Anode side cooled  
27 K/kW Cathode side cooled  
12 K/kW Double side cooled  
6 K/kW Single side cooled  
3 K/kW Double side cooled  
RthCH  
Thermal resistance case to  
heat sink  
Analytical function for transient thermal  
impedance:  
i
1
2
3
4
4
RI (K/kW)  
τi (s)  
5.4  
1.2  
4.5  
0.17  
1.7  
0.01  
0.4  
ZthJC (t) =  
R )  
(1 - e -t /τi  
i
∑
0.001  
i=1  
Fig. 1 Transient thermal impedance, junction to case.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 3 of 9  
5SGF 30J4502  
Fig. 2 On-state characteristics  
Fig. 3 Average on-state power dissipation vs.  
average on-state current.  
Fig. 4 Surge current and fusing integral vs. pulse  
width  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 4 of 9  
5SGF 30J4502  
Fig. 5 Forward blocking voltage vs. gate-cathode  
Fig. 6 Static dv/dt capability: Forward blocking  
resistance.  
voltage vs. neg. gate voltage or gate  
cathode resistance.  
Fig. 7 Forwarde gate current vs. forard gate  
Fig. 8 Gate trigger current vs. junction  
voltage.  
temperature  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 5 of 9  
5SGF 30J4502  
Fig. 9 Turn-on energy per pulse vs. on-state  
Fig. 10 Turn-on energy per pulse vs. on.-state  
current and turn-on voltage.  
current and current rise rate  
Common Test conditions for figures 9, 10 and 11:  
diG/dt = 20 A/µs  
CS  
RS  
Tj  
= 3 µF  
= 5 Ω  
= 125 °C  
Definition of Turn-on energy:  
20µs  
Eon =  
VD ITdt (t = 0, IG = 0.1 IGM )  
∫
0
Common Test conditions for figures 12, 13 and 15:  
Definition of Turn-off energy:  
40µs  
E
off  
=
V
D
I
T
dt ( t = 0, I = 0.9 ITGQ )  
T
∫
0
Fig. 11 Turn-on energy per pulse vs. on-state  
current and turn-on voltage.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 6 of 9  
5SGF 30J4502  
Fig. 12 Turn-off energy per pulse vs. turn-off current Fig. 13 Turn-off energy per pulse vs. turn-off  
and peak turn-off voltage. Extracted gate  
charge vs. turn-off current.  
current and snubber capacitance.  
Fig. 14 Required snubber capacitor vs. max  
Fig. 15 Turn-off energy per pulse, storage time  
and peak turn-off gate current vs. junction  
temperature  
allowable turn-off current.  
Fig. 16 Storage time and peak turn-off gate current  
Fig. 17 Storage time and peak turn-off gate  
vs. neg. gate current rise rate.  
current vs. turn-off current  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 7 of 9  
5SGF 30J4502  
Fig. 18 General current and voltage waveforms with GTO-specific symbols  
Fig. 19 Outline drawing. All dimensions are in  
millimeters and represent nominal values  
unless stated otherwise.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA 1211-04 Aug. 2000  
page 8 of 9  
5SGF 30J4502  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate  
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then  
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time  
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative  
during this time. Recommendation : VGR = 10… 15 V.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 2  
Doc. No. 5SYA 1211-04 Aug. 2000  
CH-5600 Lenzburg, Switzerland  
Tel:  
Fax:  
E-mail  
Internet  
+41 (0)62 888 6419  
+41 (0)62 888 6306  
info@ch.abb.com  
www.abbsem.com  
厂商 型号 描述 页数 下载

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ETC

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 		5SGA30J2502 晶闸管| GTO | 2.5KV五（ DRM ） | TO- 200AF\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF ] 2 页

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 		5SGA30J4505 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 10 页

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