VRRM
IF(AV)M
IFSM
=
=
=
=
=
=
4500 V
1200 A
25×103 A
1.3 V
Fast Recovery Diode
5SDF 13H4501
V(T0)
rT
0.48
mW
VDC-link
2800 V
Doc. No. 5SYA1104-02 Oct. 06
· Patented free-floating silicon technology
· Low on-state and switching losses
· Optimized for use as freewheeling diode in GTO
converters with high DC link voltages
· Industry standard housing
· Cosmic radiation withstand rating
Blocking
Maximum rated values 1)
Parameter
Symbol Conditions
Value
4500
2800
Unit
V
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tvj = 125°C
Permanent DC voltage for 100 FIT
failure rate
VDC-link
Ambient cosmic radiation at sea level in open
air. (100% Duty)
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
mA
Repetitive peak reverse current
IRRM
VR = VRRM, Tvj = 125°C
50
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
44
Unit
Mounting force
Acceleration
Fm
36
40
kN
a
a
Device unclamped
Device clamped
50
m/s2
m/s2
Acceleration
200
Characteristic values
Parameter
Symbol Conditions
min
26.0
typ
max
0.83
26.4
Unit
Weight
m
kg
Housing thickness
Surface creepage distance
Air strike distance
H
mm
mm
mm
DS
Da
30
20
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
