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5SDF08H6005

型号：

5SDF08H6005

描述：

快恢复二极管[ Fast Recovery Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

111 K

下载PDF手册
VRRM  
IF(AV)M  
IFSM  
=
=
=
=
=
=
5500 V  
585 A  
Fast Recovery Diode  
18×103 A  
5SDF 08H6005  
V(T0)  
rT  
4.5 V  
1.3  
mW  
PRELIMINARY  
VDClink  
3300 V  
Doc. No. 5SYA1116-01 Oct. 06  
· Patented free-floating technology  
· Industry standard housing  
· Cosmic radiation withstand rating  
· Low on-state and switching losses  
· Optimized for snubberless operation  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Value  
Unit  
V
Repetitive peak reverse voltage  
VRRM  
f = 50 Hz, tp = 10ms, Tvj = 115°C  
5500  
3300  
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (100% Duty)  
V
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (5% Duty)  
3900  
V
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
mA  
Repetitive peak reverse current  
IRRM  
VR = VRRM, Tvj = 115°C  
30  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
46  
Unit  
Mounting force  
Acceleration  
Fm  
42  
40  
kN  
a
a
Device unclamped  
Device clamped  
50  
m/s2  
m/s2  
Acceleration  
200  
Characteristic values  
Parameter  
Symbol Conditions  
min  
26.2  
typ  
max  
Unit  
Weight  
m
0.83  
26.6  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
mm  
mm  
mm  
DS  
Da  
30  
20  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDF 08H6005  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M Half sine wave, TC = 70 °C  
min  
typ  
max  
585  
Unit  
Max. average on-state  
current  
A
Max. RMS on-state current IF(RMS)  
920  
18×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tvj = 115°C, VR = 0 V  
tp = 1 ms, Tvj = 115°C, VR = 0 V  
Limiting load integral  
I2t  
1.62×106 A2s  
40×103  
Max. peak non-repetitive  
surge current  
IFSM  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
800×103 A2s  
Symbol Conditions  
min  
min  
typ  
typ  
max  
6.85  
4.5  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 1800 A, Tvj = 115°C  
V(T0)  
rT  
Tvj = 115°C  
IF = 400...2500 A  
V
1.3  
mW  
Turn-on  
Characteristic values  
Parameter  
Symbol Conditions  
max  
Unit  
Peak forward recovery  
voltage  
VFRM  
dIF/dt = 1000 A/µs, Tvj = 115°C  
370  
V
Turn-off  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
Unit  
Max. decay rate of on-state di/dtcrit  
current  
Characteristic values  
IFM = 1800 A, Tvj = 115 °C  
VDC-link = 3300 V  
440  
A/ms  
Parameter  
Symbol Conditions  
max  
900  
6.5  
Unit  
A
Reverse recovery current  
Turn-off energy  
IRM  
Err  
IFM = 1800 A, VDC-Link = 3300 V  
-dIF/dt = 440 A/µs, LCL = 300 nH  
CCL = 10 µF, RCL = 0.65 W,  
J
Tvj = 115°C, DCL = 5SDF 08H6005  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1116-01 Oct. 06  
page 2 of 6  
5SDF 08H6005  
Thermal  
Maximum rated values Note 1  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
-40  
115  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
125  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 42...46 kN  
12  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 42...46 kN  
24  
24  
3
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 42...46 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 42...46 kN  
Rth(c-h)  
Single-side cooled  
Fm = 42...46 kN  
6
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
7.713  
0.5316  
2.766  
0.0668  
1.044  
0.0078  
0.480  
0.0020  
ti(s)  
Fig. 1 Transient thermal impedance (junction to  
case) vs. time in analytical and graphical form  
(max. values)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1116-01 Oct. 06  
page 3 of 6  
5SDF 08H6005  
IF [A]  
3000  
Err [J]  
7
Tj = 115°C  
Tj = 115°C  
diF/dt = 440 A/µs  
VDClink = 3300 V  
6
5
4
3
2
1
0
2500  
2000  
1500  
1000  
500  
0
4
5
6
7
8
9
0
400  
800  
1200  
1600  
2000  
VF [V]  
IFQ [A]  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Diode turn-off energy per pulse vs. turn-off  
current  
Irr [A]  
1000  
Tj = 115°C  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
diF/dt = 440 A/µs  
VDClink = 3300 V  
0
400  
800  
1200  
1600  
2000  
IFQ [A]  
Fig. 4 Diode reverse recovery current vs. turn-off  
Fig. 5 Diode Safe Operating Area  
current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1116-01 Oct. 06  
page 4 of 6  
5SDF 08H6005  
VF(t), IF (t)  
VFR  
dIF/dt  
IF (t)  
-dIF/dt  
IF (t)  
Qrr  
VF (t)  
VF (t)  
t
tfr  
tfr (typ) 10 µs  
VR (t)  
IRM  
Fig. 6 General current and voltage waveforms  
Li  
LCL  
DCL  
RS  
IF  
CCL  
VLC  
DUT  
LLoad  
Fig. 7 Test circuit.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1116-01 Oct. 06  
page 5 of 6  
5SDF 08H6005  
Fig. 8 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise  
Related documents:  
Doc. Nr  
Titel  
5SYA 2036  
5SZK 9104  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please  
contact factory  
5SZK 9105  
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on  
request, please contact factory  
Please refer to http://www.abb.com/semiconductors for current version of documents.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1116-01 Oct. 06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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