5SDF 05F4502
On-state (see Fig. 1, 2)
IFAVM
IFRMS
IFSM
Max. average on-state current
435 A
685 A
16 kA
32 kA
Half sine wave, Tc = 70°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Before surge:
1 ms Tc = Tj = 115°C
Max. surge current integral
A2s
A2s
10 ms
òI2dt
1.28⋅106
0.5⋅106
After surge:
1 ms
1100 A
VR ≈ 0 V
VF
VF0
rF
Forward voltage drop
Threshold voltage
Slope resistance
4.7 V
2.42 V
≤
Approximation for
IF = 200…2000
Tj = 115°C
2.1
A
mΩ
Turn-on
Vfr
Peak forward recovery voltage
370 V
di/dt = 1000 A/µs, Tj = 115°C
≤
≤
Turn-off (see Fig. 3, 4)
di/dtcrit Max. decay rate of on-state current
430
IF = 1100 A,
Tj = 115 °C
VDClink = 2700 V
A/µs
VDclink = 2800 V
Irr
Reverse recovery current
Reverse recovery charge
Turn-off energy
610 A
µC
IF = 1100 A,
≤
≤
≤
di/dt = 360 A/µs, Tj = 115°C,
Qrr
Err
3.1 J
Thermal
Tj
Operating junction temperature range
-40...115°C
-40...125°C
32 K/kW
Tstg
RthJC
Storage temperature range
Thermal resistance junction to case
Anode side cooled
≤
≤
≤
≤
≤
32 K/kW
Cathode side cooled
Fm =
18… 22 kN
17 K/kW
Double side cooled
Single side cooled
Double side cooled
RthCH
Thermal resistance case to heatsink
10 K/kW
5 K/kW
Analytical function for transient thermal impedance.
i
1
9.64
0.381
2
3
1.18
0.0048
4
0.55
0.0013
n
Z
thJC (t) =
R )
(1 - e - t /τ i
i
Ri(K/kW)
3.08
0.428
å
τi(s)
i =1
Fm = 18… 22 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1151-01 Sep. 01
page 2 of 5
