5SDF 03D4502
On-state (see Fig. 1, 2)
IFAVM
IFRMS
IFSM
Max. average on-state current
275 A
435 A
5 kA
Half sine wave, Tc = 70°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Before surge:
10 kA
1 ms Tc = Tj = 115°C
Max. surge current integral
A2s
A2s
10 ms
òI2dt
⋅103
50⋅103
After surge:
1 ms
630 A
VR ≈ 0 V
VF
VF0
rF
Forward voltage drop
Threshold voltage
Slope resistance
3.9 V
2.15 V
≤
Approximation for
IF = 200…1000
Tj = 115°C
2.8
A
mΩ
Turn-on
Vfr
Peak forward recovery voltage
370 V
di/dt = 1000 A/µs, Tj = 115°C
≤
≤
Turn-off (see Fig. 3, 4)
di/dtcrit Max. decay rate of on-state current
300
IF = 630 A,
Tj = 115 °C
A/µs
VDclink = 2800 V
Irr
Reverse recovery current
Reverse recovery charge
Turn-off energy
355 A
930 µC
1.8 J
≤
≤
≤
Qrr
Err
Thermal
Tj
Operating junction temperature range
-40...115°C
-40...125°C
80 K/kW
Tstg
RthJC
Storage temperature range
Thermal resistance junction to case
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
≤
≤
≤
≤
≤
80 K/kW
Fm =
14… 18 kN
40 K/kW
RthCH
Thermal resistance case to heatsink
16 K/kW
8 K/kW
Analytical function for transient thermal impedance.
i
1
2
3
4
1.33
0.0044
n
Z
thJC (t) =
R )
(1 - e - t /τ i
i
Ri(K/kW)
20.95
0.396
10.57
0.072
7.15
0.009
å
τi(s)
i =1
Fm = 14… 18 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1117-02 Sep. 01
page 2 of 5
