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5SDF03D4501

型号：

5SDF03D4501

描述：

快恢复二极管[ Fast Recovery Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

5 页

PDF大小：

238 K

下载PDF手册
VRRM  
IFAVM  
IFSM  
VF0  
=
=
=
=
=
=
4500 V  
320 A  
Fast Recovery Diode  
5 kA  
2 V  
1.5  
5SDF 03D4501  
rF  
mΩ  
2400 V  
VDClink  
Doc. No. 5SYA1106-02 Sep. 01  
• Patented free-floating silicon technology  
• Low switching losses  
• Optimized to use as snubber and clamp diode in GTO and IGCT converters  
• Industry standard press-pack ceramic housing, hermetically cold-welded  
• Cosmic radiation withstand rating  
Blocking  
VRRM  
Repetitive peak reverse voltage  
Repetitive peak reverse current  
4500 V  
50 mA  
Half sine wave, tP = 10 ms, f = 50 Hz  
VR = VRRM, Tj = 125°C  
IRRM  
≤
VDClink  
Permanent DC voltage for 100 FIT  
failure rate  
2400  
2800  
V
V
100% Duty  
Ambient cosmic radiation at  
sea level in open air.  
5% Duty  
VDClink  
Permanent DC voltage for 100 FIT  
failure rate  
Mechanical data (see Fig. 8)  
min.  
10 kN  
Fm  
a
Mounting force  
max.  
12 kN  
Acceleration:  
50 m/s2  
Device unclamped  
Device clamped  
200 m/s2  
m
Weight  
0.25 kg  
30 mm  
20 mm  
DS  
Da  
Surface creepage distance  
Air strike distance  
≥
≥
ABB Semiconductors AG reserves the right to change specifications without notice.  
5SDF 03D4501  
On-state (see Fig. 2, 3)  
IFAVM  
IFRMS  
IFSM  
Max. average on-state current  
320 A  
500 A  
5 kA  
Half sine wave, Tc = 85°C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
tp  
tp  
tp  
tp  
IF  
=
=
=
=
=
10 ms Before surge:  
12 kA  
1 ms Tc = Tj = 125°C  
Max. surge current integral  
A2s  
A2s  
10 ms  
òI2dt  
125⋅103  
72⋅103  
After surge:  
1 ms  
1000 A  
VR ≈ 0 V  
VF  
VF0  
rF  
Forward voltage drop  
Threshold voltage  
Slope resistance  
3.5 V  
2 V  
1.5  
≤
≤
Approximation for  
IF = 200…3000  
Tj = 125°C  
A
mΩ  
Turn-on (see Fig. 4, 5)  
Vfr  
Peak forward recovery voltage  
140 V  
200 A  
di/dt = 1000 A/µs, Tj = 125°C  
Turn-off (see Fig. 6, 7)  
Irr  
Reverse recovery current  
di/dt = 100 A/µs,  
IF = 2000 A,  
RS = 22 Ω,  
Tj = 125 °C,  
VRM = 4500 V,  
CS = 0.22 µF  
≤
≤
≤
Qrr  
Err  
Reverse recovery charge  
Turn-off energy  
1000 µC  
-- J  
Thermal (see Fig. 1)  
Tj  
Operating junction temperature range  
-40...125°C  
-40...125°C  
80 K/kW  
Tstg  
RthJC  
Storage temperature range  
Thermal resistance junction to case  
Anode side cooled  
Cathode side cooled  
Double side cooled  
Single side cooled  
Double side cooled  
≤
≤
≤
≤
≤
80 K/kW  
Fm =  
10… 12 kN  
40 K/kW  
RthCH  
Thermal resistance case to heatsink  
16 K/kW  
8 K/kW  
Analytical function for transient thermal impedance.  
i
1
2
3
4
1.33  
0.0044  
n
Z
thJC (t) =  
R )  
(1 - e - t /τ i  
i
Ri(K/kW)  
20.95  
0.396  
10.57  
0.072  
7.15  
0.009  
å
τi(s)  
i =1  
Fm = 10… 12 kN Double side cooled  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1106-02 Sep. 01  
page 2 of 5  
5SDF 03D4501  
Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).  
Fig. 2 Forward current vs. forward voltage (typ.  
and max. values) and linear approximation  
of max. curve at 125°C.  
Fig. 3 Surge current and fusing integral vs. pulse  
width (max. values) for non-repetitive, half-  
sinusoidal surge current pulses.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1106-02 Sep. 01  
page 3 of 5  
5SDF 03D4501  
200  
180  
160  
140  
120  
100  
80  
Vfr  
(V)  
125°C  
60  
25°C  
40  
20  
0
0
200  
400  
600  
di/dt (A/  
800  
s)  
1000  
µ
Fig. 4 Typical forward voltage waveform when the  
diode is turned on with a high di/dt.  
Fig. 5 Forward recovery voltage vs. turn-on di/dt  
(max. values).  
Fig. 6 Typical current and voltage waveforms at  
turn-off with conventional RC snubber  
circuit.  
Fig. 7 Reverse recovery current and reverse  
recovery charge vs. di/dt (max. values).  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1106-02 Sep. 01  
page 4 of 5  
5SDF 03D4501  
Fig. 8 Outline drawing. All dimensions are in  
millimeters and represent nominal values  
unless stated otherwise.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1106-02 Sep. 01  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)62 888 6419  
Fax  
+41 (0)62 888 6306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  
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