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5SDD60N2800

型号：

5SDD60N2800

描述：

整流器器二极管[ Rectifier Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

206 K

下载PDF手册
VRSM  
IF(AV)M  
IF(RMS)  
IFSM  
=
=
=
=
=
=
2800 V  
6830 A  
10730 A  
87×103 A  
0.8 V  
Rectifier Diode  
5SDD 60N2800  
VF0  
rF  
0.05  
mW  
Doc. No. 5SYA1155-01 Jan. 05  
· Patented free-floating silicon technology  
· Very low on-state losses  
· Optimum power handling capability  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
VRRM f = 50 Hz, tp = 10ms, Tj = 160°C  
f = 5 Hz, tp = 10ms, Tj = 160°C  
Value  
2000  
2800  
Unit  
V
Repetitive peak reverse voltage  
Non - repetitive peak reverse voltage VRSM  
V
Characteristic values  
Parameter  
Symbol Conditions  
IRRM VRRM, Tj = 160°C  
min  
typ  
typ  
max  
400  
Unit  
Max. (reverse) leakage current  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
81  
max  
Unit  
kN  
m/s2  
m/s2  
Mounting force  
Acceleration  
Acceleration  
FM  
90  
108  
50  
a
a
Device unclamped  
Device clamped  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
34.3  
typ  
max  
Unit  
kg  
Weight  
m
2.8  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 90 kN, Ta = 25 °C  
34.9  
mm  
mm  
mm  
DS  
Da  
56  
22  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDD 60N2800  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IF(AV)M 50 Hz, Half sine wave, TC = 90 °C  
min  
typ  
max  
6830  
Unit  
Max. average on-state  
current  
A
10730  
87×103  
Max. RMS on-state current IF(RMS)  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tj = 160°C,  
VR = 0 V  
38.5×106  
95×103  
Limiting load integral  
I2t  
A2s  
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 8.3 ms, Tj = 160°C,  
VR = 0 V  
38×106  
Limiting load integral  
I2t  
A2s  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
V
1.05  
On-state voltage  
Threshold voltage  
Slope resistance  
VF  
IF = 5000 A, Tj = 160°C  
0.8  
V(T0)  
rT  
Tj = 160°C  
IT = 2500...7500 A  
V
0.05  
mW  
Switching  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Qrr  
6300  
mAs  
Recovery charge  
diF/dt = -10 A/µs, VR = 200 V  
IFRM = 4000 A, Tj = 160°C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1155-01 Jan. 05  
page 2 of 6  
5SDD 60N2800  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
160  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
175  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 81...108 kN  
5.7  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 81...108 kN  
11.4  
11.4  
1
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 81...108 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 81...108 kN  
Rth(c-h)  
Single-side cooled  
Fm = 81...108 kN  
2
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
3.731  
0.8113  
1.250  
0.1014  
0.434  
0.0089  
0.292  
0.0015  
ti(s)  
Fig. 1 Transient thermal impedance junction-to-  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1155-01 Jan. 05  
page 3 of 6  
5SDD 60N2800  
0
0
8
2
0
0
8
2
N
0
6
N
0
6
D
D
D
S
D
5
S
5
Fig. 2 On-state characteristics.  
Fig. 3 On-state characteristics.  
P (W)  
f
Fig. 4 On-state power losses vs average on-state  
Fig. 5 Max. permissible case temperature vs  
current.  
average on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1155-01 Jan. 05  
page 4 of 6  
5SDD 60N2800  
ò i2dt [MA2s]  
IFSM [kA]  
I
FSM(kA)  
5SDD 60N2800  
150  
50  
9 0  
8 0  
7 0  
6 0  
5 0  
4 0  
3 0  
2 0  
1 0  
0
IFSM  
Tj = 160°C  
140  
130  
120  
110  
100  
90  
48  
Tj = 160°C  
46  
44  
42  
40  
38  
36  
34  
32  
30  
80  
70  
0
0
8
2
i2t  
N
0
6
60  
ò
D
D
S
5
50  
100  
101  
102  
2 0  
n p  
0
6 7 8 1  
1
2
3
4
5
t [ms]  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IRM(A)  
Qrr  
(µA )  
s
700  
600  
30000  
500  
IFRM = 4000 A  
Tj = Tjmax  
IFRM = 4000 A  
Tj = Tjmax  
20000  
400  
300  
200  
104  
8000  
7000  
6000  
102  
80  
70  
60  
5000  
4000  
50  
3000  
2000  
40  
30  
30  
1
2
3
4
5
6
7 8 910  
20  
30  
1
2
3
4
5
6
7 8 910  
20  
(
-d /d A µs)  
iF  
/
t
-diF/dt(A/µs)  
Fig. 8 Recovery charge vs. decay rate of on-state  
Fig. 9 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1155-01 Jan. 05  
page 5 of 6  
5SDD 60N2800  
H
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
Related application notes:  
Doc. Nr  
Titel  
5SYA 2020  
5SYA 2029  
5SYA 2036  
Design of RC-Snubbers for Phase Control Applications  
Designing Large Rectifiers with High Power Diodes  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1155-01 Jan. 05  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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