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5SDD0135Z0400

型号：

5SDD0135Z0400

描述：

牌坊焊接二极管[ Housingless Welding Diode ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

84 K

下载PDF手册
VRRM  
IFAVM  
IFRMS  
IFSM  
VF0  
=
=
=
=
=
=
400 V  
13526 A  
21247 A  
85000 A  
0.758 V  
Housingless Welding Diode  
5SDD 0135Z0400  
PRELIMINARY  
rF  
0.021  
mW  
Doc. No. 5SYA1179-00 March 07  
· High forward current capability  
· Low forward and reverse recovery losses  
· High current application up to 2000 Hz  
· For parallel connection, please contact factory  
Blocking  
Half sine waveform, f = 50 Hz  
Tj = -40...180 °C  
75 mA VR = VRRM  
VRRM  
IRRM  
Repetitive peak reverse voltage  
Repetitive peak reverse current  
400 V  
Mechanical  
FM  
35..70 kN  
Mounting force  
Weight  
m
0.14 kg  
2 mm  
2 mm  
DS  
Da  
Surface creepage distance  
Air strike distance  
Fig. 1  
Outline drawing.  
All dimensions are in millimeters and represent  
nominal values unless stated otherwise.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SDD 0135Z0400  
On-state  
IFAVM  
Max. average on-state current  
13526 A  
21247 A  
91000 A  
85000 A  
Tc =  
Tc =  
85 °C Half sine pulse  
85 °C Half sine pulse  
IFRMS  
Max. RMS on-state current  
tp  
tp  
=
=
=
=
=
=
8.3 ms  
10 ms  
VR =0 V  
IFSM  
Max. peak non-repetitive surge current  
Half sine pulse  
34200 kA2s tp  
36100 kA2s tp  
8.3 ms  
10 ms  
VR =0 V  
òI2dt  
Max. surge current integral  
Half sine pulse  
0.920 V  
0.970 V  
0.758 V  
IF  
IF  
8000 A  
10000 A  
VF max Max. on-state voltage  
VF0  
rF  
Max. Threshold voltage  
Max. Slope resistance  
0.021  
IF = 10 000…30 000 A  
mW  
IF = 1 000 A, di/dt = -30 A/µs,  
VR = 100 V  
Qrr  
Typ. Recovered charge  
600 µC  
Unless otherwise specified Tj = 180 °C  
Thermal characteristics  
Operating junction temperature range  
Tj  
-40...180 °C  
-40...180 °C  
Storage temperature range  
Tstg  
Rth(j-c)  
Thermal resistance  
junction to case  
5.2 K/kW Anode side cooled  
15.1 K/kW Cathode side cooled  
3.9 K/kW Double side cooled  
4.7 K/kW Anode side cooled  
5.8 K/kW Cathode side cooled  
2.6 K/kW Double side cooled  
Rth(c-h) Thermal resistance  
case to heatsink  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1179-00 March 07  
page 2 of 6  
5SDD 0135Z0400  
4
R )  
(1 - e - t /ti  
i
Z th (j-c )(t) =  
å
4
3
2
1
i =1  
i
1
2
3
4
Ri (K/kW) 2.6480  
0.8700  
0.0255  
0.2200  
0.0041  
0.1500  
0.0006  
0.0454  
t i (s)  
Conditions:  
Fm = 35 +5/-0 kN, Double side cooled  
Correction for periodic waveforms  
0
180° sine:  
120° sine:  
60° sine:  
180° rectangular:  
120° rectangular:  
60° rectangular:  
0.9 K/kW  
1.2 K/kW  
2.2 K/kW  
0.8 K/kW  
1.2 K/kW  
2.2 K/kW  
0,0001  
0,001  
0,01  
0,1  
1
t
Square wave pulse duration  
( s )  
d
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1179-00 March 07  
page 3 of 6  
5SDD 0135Z0400  
On-state characteristics  
Surge current characteristics  
35000  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
25 °C  
Tj = 180 °C  
30000  
25000  
20000  
15000  
10000  
5000  
0
i2dt  
I FSM  
0
0,5  
1
1,5  
2
0
V F ( V )  
1
10  
100  
t ( ms )  
Fig. 3  
Fig. 4 Surge forward current vs. pulse length,  
half sine wave, single pulse,  
VR = 0 V, Tj = Tjmax  
Forward current vs. forward voltage (max.  
values).  
Surge current characteristics  
Forward power loss  
= 60°  
90  
120°180°  
y
25000  
20000  
15000  
10000  
5000  
0
80  
70  
60  
DC  
50  
40  
30  
20  
10  
0
VR = 0 V  
VR 0.5 VRRM  
£
0
4000  
8000  
12000  
16000  
I FAV ( A )  
1
10  
100  
Number n of cycles at 50 Hz  
Fig. 5 Surge forward current vs. number  
Fig. 6 Forward power loss vs. average forward  
of pulses, half sine wave, Tj = Tjmax  
current, sine waveform, f = 50 Hz, T = 1/f  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1179-00 March 07  
page 4 of 6  
5SDD 0135Z0400  
Forward power loss  
90° 120°  
= 30°  
60°  
25000  
20000  
15000  
10000  
5000  
0
y
180  
160  
140  
120  
100  
80  
180°  
270°  
DC  
DC  
= 60°  
120°  
180°  
y
60  
0
4000  
8000  
12000  
16000  
0
4000  
8000  
12000  
IFAV  
16000  
( A )  
IFAV  
( A )  
Fig. 7 Forward power loss vs. average forward  
Fig. 8 Forward power loss vs. average forward  
current, square waveform, f = 50 Hz, T =  
1/f  
current, sine waveform, f = 50 Hz, T = 1/f  
180  
160  
140  
120  
DC  
100  
270°  
80  
= 30°  
60° 90°  
8000  
120°  
180°  
y
60  
0
4000  
12000  
IFAV  
16000  
( A )  
Fig. 9 Max. case temperature vs. aver. forward  
current, square waveform, f = 50 Hz, T =  
1/f  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1179-00 March 07  
page 5 of 6  
5SDD 0135Z0400  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1179-00 March 07  
ABB Switzerland Ltd  
Semiconductors  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone  
Fax  
+41 (0)58 586 1419  
+41 (0)58 586 1306  
Email  
abbsem@ch.abb.com  
Internet  
www.abb.com/semiconductors  
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