请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZ400R65KF1

型号：

FZ400R65KF1

描述：

IGBT -模块[ IGBT-Module ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

10 页

PDF大小：

175 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Tvj=125°C  
6500  
6300  
5800  
Kollektor-Emitter-Sperrspannung  
Tvj=25°C  
VCES  
V
collector-emitter voltage  
Tvj=-40°C  
T
T
C = 80 °C  
C = 25 °C  
IC,nom.  
IC  
400  
800  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
800  
7,4  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
400  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
800  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kV  
VR = 0V, tp = 10ms, Tvj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
87  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
10,2  
5,1  
Teilentladungs Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)  
VISOL  
kV  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
I
C = 400A, VGE = 15V, Tvj = 25°C  
C = 400A, VGE = 15V, Tvj = 125°C  
VCE sat  
-
4,3  
4,9  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
-
5,3  
5,9  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 70mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
6,4  
7,0  
5,6  
56  
8,1  
V
Gateladung  
gate charge  
VGE = -15V ... +15V  
QG  
-
-
-
µC  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 6300V, VGE = 0V, Tvj = 25°C  
Cies  
-
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
0,4  
40  
mA  
mA  
ICES  
-
V
CE = 6500V, VGE = 0V, Tvj = 125°C  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Dr. Oliver Schilling  
date of publication: 2002-07-05  
revision/Status: Series 1  
approved by: Dr. Schütze 2002-07-05  
1
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 400A, VCE = 3600V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C,  
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C,  
IC = 400A, VCE = 3600V  
-
-
0,75  
0,72  
-
-
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C,  
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C,  
IC = 400A, VCE = 3600V  
-
-
0,37  
0,40  
-
-
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C,  
-
-
5,50  
6,00  
-
-
µs  
µs  
VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C,  
IC = 400A, VCE = 3600V  
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C,  
-
-
0,40  
0,50  
-
-
µs  
µs  
VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C,  
IC = 400A, VCE = 3600V, VGE = ±15V  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
RGon = 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH  
IC = 400A, VCE = 3600V, VGE = ±15V  
-
-
4000  
2300  
-
-
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
RGoff = 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH  
t
P ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05  
Vj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt  
Kurzschlußverhalten  
SC Data  
ISC  
T
-
-
2000  
20  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
-
0,18  
-
mΩ  
min. typ. max.  
Diode / Diode  
Durchlaßspannung  
forward voltage  
I
I
F = 400A, VGE = 0V, Tvj = 25°C  
F = 400A, VGE = 0V, Tvj = 125°C  
VF  
IRM  
Qr  
3,0  
3,8  
4,6  
V
V
3,9  
4,7  
IF = 400A, - diF/dt = 1400A/µs  
Rückstromspitze  
peak reverse recovery current  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
IF = 400A, - diF/dt = 1400A/µs  
-
-
540  
660  
-
-
A
A
Sperrverzögerungsladung  
recovered charge  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
IF = 400A, - diF/dt = 1400A/µs  
-
-
360  
700  
-
-
µC  
µC  
Abschaltenergie pro Puls  
reverse recovery energy  
VR = 3600V, VGE = -10V, Tvj = 25°C  
VR = 3600V, VGE = -10V, Tvj = 125°C  
Erec  
-
-
440  
-
-
mJ  
mJ  
1050  
2
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
0,017  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
-
-
0,032  
pro Modul / per Module  
Übergangs-Wärmewiderstand  
RthCK  
Tvj, max  
Tvj,op  
Tstg  
-
0,008  
-
K/W  
°C  
thermal resistance, case to heatsink  
λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
-
-
-
-
150  
125  
125  
Betriebstemperatur Sperrschicht  
junction operation temperature  
Schaltvorgänge IGBT(RBSOA);Diode(SOA)  
switching operation IGBT(RBSOA);Diode(SOA)  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
AlN  
56  
internal insulation  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
26  
CTI  
>600  
comperative tracking index  
Schraube /screw M6  
M
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
Anschlüsse / terminals M4  
Anschlüsse / terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
M
G
8 - 10  
Gewicht  
weight  
1000  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
VGE = 15V  
800  
700  
600  
500  
400  
300  
200  
100  
0
25°C  
125°C  
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
8,0  
9,0  
10,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
IC = f (VCE), VGE= < see inset >  
Tvj = 125°C  
800  
700  
600  
500  
400  
300  
200  
100  
0
20V  
15V  
12V  
10V  
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
8,0  
9,0  
10,0  
VCE [V]  
4
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 10V  
800  
700  
600  
500  
400  
300  
200  
100  
0
25°C  
125°C  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
I = f (VF)  
F
800  
25°C  
125°C  
700  
600  
500  
400  
300  
200  
100  
0
0,0  
1,0  
2,0  
3,0  
4,0  
5,0  
6,0  
7,0  
VF [V]  
5
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
RGon=6,2Ω, RGoff=36Ω, CGE = 44nF, VGE=±15V, VCE = 3600V, Tvj = 125°C,  
11000  
10000  
Eon  
Eoff  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Erec  
0
100  
200  
300  
400  
500  
600  
700  
800  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 400A , VCE = 3600V , VGE=±15V, CGE=44nF , Tvj = 125°C  
8000  
7200  
6400  
5600  
4800  
4000  
3200  
2400  
1600  
800  
Eon  
Eoff  
Erec  
0
5
10  
15  
20  
25  
30  
RG [Ω]  
35  
40  
45  
50  
55  
60  
6
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA) RG,off = 36Ω, CGE=44nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V  
800  
700  
600  
Tvj=125°C  
500  
Tvj=25°C  
400  
300  
200  
100  
0
2000  
2500  
3000  
3500  
4000  
4500  
5000  
5500  
6000  
6500  
VCE [V] (at auxiliary terminals)  
Sicherer Arbeitsbereich Diode (SOA)  
safe operation area Diode (SOA)  
Pmax = 1200kW ; Tvj= 125°C  
800,0  
700,0  
600,0  
500,0  
400,0  
300,0  
200,0  
100,0  
0,0  
0
1000  
2000  
3000  
4000  
5000  
6000  
VR [V] (at auxiliary terminals)  
7
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
Zth:Diode  
Zth:IGBT  
0,001  
0,001  
0,01  
0,1  
1
10  
100  
t [s]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
: IGBT  
: Diode  
: Diode  
7,65  
0,030  
14,40  
0,030  
4,25  
1,02  
4,08  
1,0  
τi [s]  
ri [K/kW]  
τi [s]  
0,10  
8,00  
0,10  
0,30  
1,92  
0,30  
7,68  
1,0  
8
FZ 400 R65 KF1 (final 1).xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 400 R 65 KF1  
Äußere Abmessungen /  
extenal dimensions  
Anschlüsse / Terminals  
1
2
Hilfsemitter / auxiliary emitter  
Gate / gate  
3
4,6  
5,7  
Hilfskollektor / auxiliary collector  
Emitter / emitter  
Kollektor / collector  
9
FZ 400 R65 KF1 (final 1).xls  
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
厂商 型号 描述 页数 下载

ETC

 		FZ400R06KF 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 400A I（C ） | M ： HL093HW048\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | M:HL093HW048 ] 1 页

ETC

 		FZ400R06KF2 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 400A I（C ） | M ： HL093HW048\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | M:HL093HW048 ] 2 页

ETC

 		FZ400R06KF3 晶体管| IGBT功率模块|独立| 600V V（ BR ） CES | 400A I（C ）\n[ TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C) ] 1 页

ETC

 		FZ400R06KL 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 400A I（C ） | M ： HL093HW048\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 400A I(C) | M:HL093HW048 ] 1 页

ETC

 		FZ400R06KL2 晶体管| IGBT功率模块|独立| 600V V（ BR ） CES | 400A I（C ）\n[ TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C) ] 2 页

ETC

 		FZ400R10KF2 晶体管| IGBT | N -CHAN | 1KV V（ BR ） CES | 400A I（C ） | M ： HL093HW048\n[ TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 400A I(C) | M:HL093HW048 ] 1 页

EUPEC

 		FZ400R12KE3 IGBT逆变器[ IGBT-inverter ] 8 页

INFINEON

 		FZ400R12KE3B1 [ Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, ] 8 页

INFINEON

 		FZ400R12KE3B1HOSA1 [ Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, ] 8 页

INFINEON

 		FZ400R12KE3HOSA1 [ Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 ] 8 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.241842s