找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN44N80

型号:

IXFN44N80

描述:

HiPerFETTM功率MOSFET的单MOSFET模[ HiPerFETTM Power MOSFETs Single MOSFET Die ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

120 K

HiPerFETTM  
Power MOSFETs  
Single MOSFET Die  
IXFN 44N80  
VDSS = 800 V  
ID25 44 A  
RDS(on) = 0.165 W  
=
D
N-ChannelEnhancementMode  
G
AvalancheRated, Highdv/dt, Lowtrr  
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
E153432  
S
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
ID25  
TC = 25°C, Chip capability  
44  
A
D
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
176  
44  
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
TC = 25°C  
TC = 25°C  
64  
4
mJ  
J
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
Features  
PD  
TC = 25°C  
700  
W
• Internationalstandardpackages  
• miniBLOC, withAluminiumnitride  
isolation  
• Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
VISOL  
Md  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
• Lowpackageinductance  
• FastintrinsicRectifier  
Weight  
30  
g
Applications  
• DC-DC converters  
• Batterychargers  
• Switched-modeandresonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
800  
2.0  
V
V
• DC choppers  
VGH(th)  
4.0  
• Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
100 mA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Advantages  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms,  
duty cycle d £ 2 %  
0.165  
W
98594B (02/01)  
© 2001 IXYS All rights reserved  
IXFN 44N80  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
miniBLOC, SOT-227 B  
min.  
typ. max.  
VDS = 15 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
32  
50  
S
Ciss  
Coss  
Crss  
10000  
pF  
pF  
pF  
1300  
330  
td(on)  
tr  
td(off)  
tf  
35  
48  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
RG = 1 W (External),  
100  
24  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
380  
70  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
Qgd  
170  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
RthJC  
RthCK  
0.18 K/W  
K/W  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
0.05  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
44  
176  
1.3  
A
A
V
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
250 ns  
QRM  
IRM  
IF = 25A, -di/dt = 100 A/ms, VR = 100 V  
1.2  
8
mC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

ILSI

IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.188408s