5SDF 04F6004
On-state (see Fig. 1, 2)
IFAVM
IFRMS
IFSM
Max. average on-state current
380 A
600 A
10 kA
22 kA
Half sine wave, Tc = 70°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Before surge:
1 ms Tc = Tj = 115°C
Max. surge current integral
A2s
A2s
10 ms
òI2dt
0.5⋅106
0.24⋅106
After surge:
1 ms
900 A
VR ≈ 0 V
VF
VF0
rF
Forward voltage drop
Threshold voltage
Slope resistance
5.2 V
2.7 V
≤
Approximation for
IF = 200…2000
Tj = 115°C
2.8
A
mΩ
Turn-on (see Fig. 3, 4)
Vfr
Peak forward recovery voltage
370 V
di/dt = 1000 A/µs, Tj = 115°C
≤
≤
Turn-off
di/dtcrit Max. decay rate of on-state current
340
IF = 900 A,
Tj = 115 °C
A/µs
VDclink = 3300 V
Irr
Reverse recovery current
Reverse recovery charge
Turn-off energy
600 A
µC
≤
≤
≤
Qrr
Err
3.5 J
Thermal
Tj
Operating junction temperature range
-40...115°C
-40...125°C
44 K/kW
Tstg
RthJC
Storage temperature range
Thermal resistance junction to case
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
≤
≤
≤
≤
≤
44 K/kW
Fm =
18… 22 kN
22 K/kW
RthCH
Thermal resistance case to heatsink
10 K/kW
5 K/kW
Analytical function for transient thermal impedance.
i
1
9.74
0.387
2
3.12
0.0457
3
4
0.52
0.0018
n
Z
thJC (t) =
R )
(1 - e - t /τ i
i
Ri(K/kW)
1.18
0.006
å
τi(s)
i =1
Fm = 18… 22 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1150-02 Sep. 01
page 2 of 5
