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3SK225_07

型号:

3SK225_07

描述:

硅N沟道双栅MOS型电视调谐器,甚高频射频放大器的应用[ Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications ]

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

657 K

3SK225  
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type  
3SK225  
TV Tuner, VHF RF Amplifier Applications  
Unit: mm  
FM Tuner Applications  
TV Tuner, UHF RF Amplifier Applications  
Superior cross modulation performance.  
Low noise figure: NF = 2.0dB (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
13.5  
±8  
V
V
DS  
Gate 1-source voltage  
Gate 2-source voltage  
Drain current  
V
V
G1S  
G2S  
±8  
V
I
30  
mA  
mW  
°C  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
150  
D
ch  
stg  
T
125  
T
55~125  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-3J1A  
Weight: 0.013 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate 1 leakage current  
Gate 2 leakage current  
Drain-source voltage  
I
I
V
V
V
V
V
V
V
= 0, V  
= 0, V  
= ±6 V, V  
= 0  
1.0  
±50  
±50  
nA  
nA  
V
G1SS  
DS  
G1S  
G1S  
G2S  
= ±6 V  
G2S  
= 0, V  
G2SS  
DS  
V
= −4 V, V  
= −4 V, I = 100 μA 13.5  
G2S D  
(BR) DSX  
G1S  
Drain current  
I
= 6 V, V  
= 6 V, V  
= 6 V, V  
= 6 V, V  
= 0, V  
= 4.5 V  
0
0
0.1  
1.0  
1.5  
mA  
V
DSS  
DS  
DS  
DS  
DS  
G1S  
G2S  
G1S  
G2S  
G2S  
Gate 1-source cut-off voltage  
Gate 2-source cut-off voltage  
V
V
= 4.5 V, I = 100 μA  
G1S (OFF)  
G2S (OFF)  
D
= 4 V, I = 100 μA  
0.5  
V
D
= 4.5 V, I = 10 mA,  
D
Forward transfer admittance  
Y ⎪  
fs  
21  
mS  
f = 1 kHz  
Input capacitance  
Reverse transfer capacitance  
Power gain  
C
19  
3.4  
0.020  
22  
4.4  
0.05  
pF  
pF  
dB  
dB  
iss  
V
= 6 V, V  
= 4.5 V, I = 10 mA,  
D
DS  
f = 1 MHz  
G2S  
C
rss  
G
ps  
V
= 6 V, V  
= 4.5 V, I = 10 mA,  
D
DS  
G2S  
f = 500 MHz (Figure 1)  
Noise figure  
NF  
2.0  
3.5  
1
2007-11-01  
3SK225  
L1 L4: φ0.8 mm silver plated copper wire  
C: Air trimmer TTA25A200A (MURATA Manufacturing. Co., Ltd.)  
RFC 1: φ0.35 mm copper wire 3 mm ID, 7 T  
RFC 2: φ0.35 mm copper wire 3 mm ID, 10 T  
Figure 1 500 MHz, G , NF Test Circuit  
ps  
Marking  
2
2007-11-01  
3SK225  
3
2007-11-01  
3SK225  
4
2007-11-01  
3SK225  
5
2007-11-01  
3SK225  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  
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