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5STP42U6200

型号：

5STP42U6200

描述：

相位控制晶闸管[ Phase Control Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

6 页

PDF大小：

796 K

下载PDF手册
V
DRM
= 5600  
VDSM = 6500  
IT(AV)M = 3460  
IT(RMS) = 5440  
V
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V(T0)  
rT  
= 71.4×103  
5STP 42U6500  
= 1.24  
= 0.162  
mW  
Doc. No. 5SYA1043-02 Oct. 04  
·
·
·
·
·
Patented free-floating silicon technology  
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol Conditions  
5STP 42U6500 5STP 42U6200 5STP 42U5800  
VDSM, VRSM f = 5 Hz, tp = 10 ms  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
6500 V  
5600 V  
7000 V  
6200 V  
5300 V  
5800 V  
4900 V  
6300 V  
VRSM  
tp = 5 ms, single pulse  
6700 V  
dV/dtcrit  
Exp. to 3750 V, Tvj = 110°C  
2000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IDSM VDSM, Tvj = 110°C  
IRSM VRSM, Tvj = 110°C  
min  
typ  
max  
700  
700  
Unit  
Forward leakage current  
Reverse leakage current  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
135  
max  
Unit  
Mounting force  
Acceleration  
FM  
120  
160  
50  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Acceleration  
Characteristic values  
Parameter  
100  
Symbol Conditions  
typ  
max  
Unit  
Weight  
m
3.6  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
FM = 135 kN, Ta = 25 °C  
34.8  
35.5  
mm  
mm  
mm  
DS  
Da  
56  
22  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 42U6500  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
A
Average on-state current  
RMS on-state current  
IT(AV)M  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70°C  
3460  
5440  
71.4×103  
A
Peak non-repetitive surge  
current  
tp = 10 ms, Tvj = 110 °C,  
VD = VR = 0 V  
A
Limiting load integral  
I2t  
25.48×106 A2s  
76.14×103  
Peak non-repetitive surge  
current  
ITSM  
tp = 8.3 ms, Tvj = 110 °C,  
VD = VR = 0 V  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
24.64×106 A2s  
Symbol Conditions  
min  
typ  
max  
1.71  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 3000 A, Tvj = 110 °C  
IT = 2000 A - 6000 A, Tvj= 110 °C  
1.24  
0.162  
200  
V
mW  
mA  
mA  
mA  
mA  
IH  
Tvj = 25 °C  
Tvj = 110 °C  
Tvj = 25 °C  
Tvj = 110 °C  
100  
Latching current  
IL  
900  
700  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
di/dtcrit  
Tvj = 110 °C,  
Cont.  
250  
A/µs  
ITRM = 3000 A,  
VD £ 1880 V,  
f = 50 Hz  
Cont.  
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
A/µs  
µs  
f = 1Hz  
IFG = 2 A, tr = 0.5 µs  
Circuit-commutated turn-off tq  
time  
Tvj = 110°C, ITRM = 3000 A,  
VR = 200 V, diT/dt = -1 A/µs,  
800  
VD £ 0.67×VDRM, dvD/dt = 20V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
min  
4200  
typ  
max  
Unit  
Recovery charge  
Qrr  
Tvj = 110°C, ITRM = 3000 A,  
VR = 200 V,  
5200  
µAs  
diT/dt = -1 A/µs  
Gate turn-on delay time  
tgd  
3
µs  
VD = 0.4×VRM, IFG = 2 A,  
tr = 0.5 µs, Tvj = 25 °C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1043-02 Oct. 04  
page 2 of 6  
5STP 42U6500  
Triggering  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
12  
10  
10  
V
A
V
Average gate power loss  
Characteristic values  
Parameter  
PG(AV)  
see Fig. 9  
Symbol Conditions  
typ  
max  
Unit  
Gate-trigger voltage  
VGT  
IGT  
Tvj = 25 °C  
2.6  
V
Gate-trigger current  
Tvj = 25 °C  
400  
mA  
V
Gate non-trigger voltage  
Gate non-trigger current  
VGD  
IGD  
VD = 0.4 x VDRM, Tvjmax = 110 °C  
VD = 0.4 x VDRM, Tvjmax = 110°C  
0.3  
10  
mA  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
110  
°C  
Storage temperature range Tstg  
Characteristic values  
Parameter  
-40  
140  
°C  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 120...160 kN  
4
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 120...160 kN  
8
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 120...160 kN  
8
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 120...160 kN  
0.8  
1.6  
Rth(c-h)  
Single-side cooled  
Fm = 120...160 kN  
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
2.695  
0.9692  
0.814  
0.1332  
0.330  
0.0177  
0.162  
0.0042  
ti(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1043-02 Oct. 04  
page 3 of 6  
5STP 42U6500  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT110  
VT25  
= A +B ×IT +CTvj ×ln(IT +1)+D × IT  
= A + BTvj ×IT +CTvj ×ln(IT +1)+ D × IT  
Tvj Tvj  
Tvj  
Tvj  
Tvj  
Valid for IT = 800 – 100000 A  
Valid for IT = 800 – 100000 A  
A25  
B25 C25  
D25  
A110  
B110  
C110  
D110  
123.80×10-6 91.68×10-6 192.1×10-3 -2.91×10-3  
136.10×10-6 117.20×10-6 165.60×10-3 957.50×10-6  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Max. on-state voltage characteristics  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Turn-on losses excluded.  
on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1043-02 Oct. 04  
page 4 of 6  
5STP 42U6500  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
IGon  
» 2..5 A  
³ 1.5 IGT  
100 %  
90 %  
IGM  
diG/dt ³ 2 A/ms  
tr  
£ 1 ms  
tp(IGM  
)
» 5...20 ms  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1043-02 Oct. 04  
page 5 of 6  
5STP 42U6500  
g
g
Fig. 12 Device Outline Drawing.  
Related application notes:  
Doc. Nr  
Titel  
5SYA2020  
5SYA2034  
5SYA 2036  
Design of RC-Snubber for Phase Control Applications  
Gate-drive Recommendations for PCT's  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1043-02 Oct. 04  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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