@vic
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
AV9012LT1 TRANSISTOR (PNP)
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM:
2. 4
1. 3
0.3
W (Tamb=25℃)
Collector current
ICM:
Collector-base voltage
-0.5
-40
A
V
V(BR)CBO
:
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -100µA, IE=0
Ic= -1mA, IB=0
MIN
-40
-25
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=-100µA, IC=0
VCB=-40 V, IE=0
-0.1
-0.1
-0.1
400
µA
µA
µA
ICEO
VCE=-20V, IB=0
Collector cut-off current
IEBO
VEB= -5V, IC=0
Emitter cut-off current
hFE(1)
VCE=-1V, IC= -50mA
VCE=-1V, IC=-500mA
IC=-500 mA, IB= -50mA
IC=-500 mA, IB= -50mA
120
40
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=-6V, IC= -20mA
f=30MHz
150
MHz
Transition frequency
fT
CLASSIFICATION OF hFE(1)
Rank
L
H
J
Range
120-200
200-350
300-400
DEVICE MARKING
S9012LT1=2T1
Copyright @vic Electronics Corp.
Website http://www.avictek.com
