PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
• RDS(ON), VGS@10V,IDS@30A=9mΩ
• RDS(ON), VGS@4.5V,IDS@30A=12mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-202,Method 208
• Marking : 09N03
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol
VD S
Limit
25
Units
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VG S
+20
50
V
A
ID
1 )
Pulsed Drain Current
ID M
240
A
TA =25O
TA =75O
C
C
45
26
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
TJ ,TS T G
-55 to + 150
O C
Avalanche Energy with Single Pulse
ID=23A, VDD=25V, L=0.5mH
EA S
130
2.8
50
mJ
O C/W
O C/W
Junction-to-Case Thermal Resistance
Rθ J C
Junction-to Ambient Thermal Resistance(PCB mounted)2
Rθ J A
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-MAY.29.2006
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