SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT591A
ISSUE 1 - DECEMBER 2001
FEATURES
C
Low equivalent on resistance RCE(sat) = 350m at 1A
PART MARKING DETAIL -
COMPLEMENTARY TYPE -
FZT591A
FZT491A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Base Current
IC
-1
-200
A
IB
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
2
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX. UNI CONDITIONS.
T
Collector-Base Breakdown Voltage
V(BR)CBO
-40
-40
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown Voltage V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO
ICBO
-100
-100
-100
nA VCB=-30V
nA VEB=-4V
nA VCES=-30V
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off Current
ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.35
-0.5
V
V
V
IC=-100mA,IB=-1mA*
IC=-500mA,IB=-20mA*
IC=-1A, IB=-100mA*
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
VBE(sat)
VBE(on)
-1.1
-1.0
V
V
IC=-1A, IB=-50mA*
IC=-1A, VCE=-5V*
Static Forward Current Transfer Ratio hFE
300
300
250
160
30
IC=-1mA,
800
IC=-100mA*,
IC=-500mA*, VCE=-5V
IC=-1A*,
IC=-2A*,
Transition Frequency
Output Capacitance
fT
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Cobo
10
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for this device
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