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IXFT58N20

型号：

IXFT58N20

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

106 K

下载PDF手册
HiPerFETTM  
VDSS  
ID25 RDS(on)  
Power MOSFETs  
200V 42 A 60mW  
200V 50 A 45mW  
200V 58 A 40mW  
IXFH/IXFM42N20  
IXFH/IXFM/IXFT50N20  
IXFH/IXFT58N20  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
trr £ 200 ns  
TO-247AD(IXFH)  
(TAB)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
V
TO-268(D3)CaseStyle  
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
G
S
ID25  
IDM  
IAR  
TC = 25°C  
42N20  
50N20  
58N20  
42N20  
50N20  
58N20  
42N20  
50N20  
58N20  
42  
50  
58  
168  
200  
232  
42  
A
A
A
A
A
A
A
A
A
(TAB)  
TO-204 AE (IXFM)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
S
50  
58  
G
D
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
EAR  
TC = 25°C  
30  
5
mJ  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
Features  
PD  
TC = 25°C  
300  
W
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
• Lowpackageinductance  
- easy to drive and to protect  
• FastintrinsicRectifier  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
Applications  
• DC-DC converters  
• Synchronousrectification  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• ACmotorcontrol  
• Temperatureandlightingcontrols  
• Lowvoltagerelays  
VDSS  
VGS = 0 V, ID = 250 mA  
200  
2
V
V
VGS(th)  
VDS = VGS, ID = 4 mA  
4
Advantages  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
200 mA  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• Highpowersurfacemountablepackage  
• Highpowerdensity  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
91522H(2/98)  
1 - 4  
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20  
IXFH/IXFM50N20 IXFT58N20  
Symbol  
TestConditions  
CharacteristicValues  
TO-247 AD (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
RDS(on) VGS = 10 V, ID = 0.5 ID25  
42N20  
50N20  
58N20  
0.060  
0.045  
0.040  
W
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
20  
32  
S
Ciss  
Coss  
Crss  
4400  
800  
285  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
18  
15  
72  
16  
25  
20  
90  
25  
ns  
ns  
ns  
ns  
Dim. Millimeter  
Inches  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1 W (External)  
Min. Max. Min. Max.  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Qg(on)  
Qgs  
Qgd  
190  
35  
95  
220  
50  
110  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-247 and TO-204 Case styles)  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
RthJC  
RthCK  
0.42 K/W  
K/W  
-
4.5  
-
0.177  
0.25  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
N
1.5 2.49 0.087 0.102  
Symbol  
IS  
TestConditions  
Min. Typ.  
Max.  
TO-204 AE (IXFM) Outline  
VGS = 0 V  
42N20  
50N20  
58N20  
42  
50  
58  
A
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
42N20  
50N20  
58N20  
168  
200  
232  
A
A
A
VSD  
trr  
QRM  
IRM  
IF = IS, VGS = 0 V,  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
1.5  
V
TJ = 25°C  
TJ = 125°C  
200 ns  
300 ns  
IF = 25A,  
-di/dt = 100 A/ms,  
VR = 100 V  
TJ = 25°C  
TJ = 125°C  
1.5  
2.6  
mC  
mC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
B
38.61 39.12 1.520 1.540  
- 22.22 0.875  
TJ = 25°C  
TJ = 125°C  
19  
23  
A
A
-
C
D
6.40 11.40 0.252 0.449  
1.45 1.60 0.057 0.063  
E
F
1.52 3.43 0.060 0.135  
30.15 BSC 1.187 BSC  
TO-268AA (D3 PAK)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
G
H
10.67 11.17 0.420 0.440  
5.21 5.71 0.205 0.225  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
J
K
16.64 17.14 0.655 0.675  
11.18 12.19 0.440 0.480  
Q
R
3.84 4.19 0.151 0.165  
25.16 26.66 0.991 1.050  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
Min. Recommended Footprint  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20  
IXFH/IXFM50N20  
IXFT58N20  
Fig. 1 Output Characteristics  
Fig. 2 Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
TJ = 25°C  
9V  
8V  
7V  
TJ = 25°C  
6V  
5V  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 Temperature Dependence  
of Drain to Source Resistance  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
ID = 25A  
VGS = 10V  
VGS = 15V  
0
25  
50  
75 100 125 150 175  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Drain Current vs.  
Case Temperature  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
BVDSS  
58N20  
50N20  
42N20  
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
3 - 4  
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20  
IXFH/IXFM50N20  
IXFT58N20  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Forward Bias Safe Operating Area  
14  
12  
10  
8
VDS = 100V  
10µs  
ID = 50A  
100  
10  
1
Limited by RDS(on)  
IG = 10mA  
100µs  
1ms  
6
10ms  
4
100ms  
2
0
200  
100  
0
25 50 75 100 125 150 175 200  
Gate Charge - nCoulombs  
1
10  
VDS - Volts  
Fig.9 Capacitance Curves  
Fig.10 Source Current vs. Source  
to Drain Voltage  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
50  
40  
30  
20  
10  
0
Ciss  
f = 1MHz  
DS = 25V  
TJ = 125°C  
V
Coss  
Crss  
TJ = 25°C  
0
0
5
10  
15  
20  
25  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VDS - Volts  
VSD - Volts  
Fig.11 Transient Thermal Impedance  
D=0.5  
D=0.2  
0.1  
0.01  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
Time - Seconds  
0.1  
1
10  
© 2000 IXYS All rights reserved  
4 - 4  
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