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IXFN72N55Q2

型号：

IXFN72N55Q2

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

562 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
VDSS = 550 V  
ID25 = 72 A  
IXFN 72N55Q2  
R
trr  
DS(on)= 72 mΩ  
≤ 250 ns  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
Preliminary Data Sheet  
miniBLOC, SOT-227 B (IXFN)  
E153432  
S
Symbol  
TestConditions  
Maximum Ratings  
G
VDSS  
VDGR  
T
= 25°C to 150°C  
550  
550  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
S
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
ID25  
IDM  
IAR  
T
= 25°C  
72  
288  
72  
A
A
A
TC = 25°C, pulse width limited by TJM  
G = Gate  
S = Source  
D = Drain  
TCC = 25°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
T
= 25°C  
60  
5.0  
mJ  
J
TCC = 25°C  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
20  
V/ns  
Features  
•Double metal process for low  
gate resistance  
•miniBLOC, with Aluminium nitride  
isolation  
•Unclamped Inductive Switching (UIS)  
rated  
•Low package inductance  
PD  
TJ  
TC = 25°C  
890  
W
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
VISOL  
Md  
50/60 Hz, RMS, t = 1 minute  
2500  
V
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
•Fast intrinsic Rectifier  
Weight  
30  
g
Applications  
•DC-DC converters  
•Switched-mode and resonant-mode  
power supplies  
•DC choppers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
•Pulse generators  
VGS = 0 V, ID = 1mA  
550  
2.5  
V
V
V G S ( t h )  
IGSS  
VDS = VGS, ID = 8mA  
VGS = 30 V, VDS = 0  
5.0  
Advantages  
•Easy to mount  
•Space savings  
•High power density  
200 nA  
IDSS  
V
= V  
T = 25°C  
TJJ = 125°C  
100 µA  
VGDSS = 0DVSS  
5 mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
72 mΩ  
DS99030B(10/03)  
© 2003 IXYS All rights reserved  
IXFN 72N55Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 1  
40  
57  
S
Ciss  
Coss  
Crss  
10500  
1500  
230  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
30  
23  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
td(off)  
tf  
RG = 1 Ω (External)  
58  
10  
ns  
ns  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
C
D
E
F
31.50  
7.80  
4.09  
4.09  
4.09  
14.91  
31.88  
8.20  
4.29  
4.29  
4.29  
15.11  
1.240  
0.307  
0.161  
0.161  
0.161  
0.587  
1.255  
0.323  
0.169  
0.169  
0.169  
0.595  
Qg(on)  
Qgs  
258  
65  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
123  
G
H
J
K
L
M
30.12  
38.00  
11.68  
8.92  
0.76  
12.60  
30.30  
38.23  
12.22  
9.60  
0.84  
12.85  
1.186  
1.496  
0.460  
0.351  
0.030  
0.496  
1.193  
1.505  
0.481  
0.378  
0.033  
0.506  
RthJC  
RthCK  
0.14 K/W  
K/W  
0.05  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.155  
0.186  
0.235  
1.059  
0.174  
0.191  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Q
26.54  
26.90  
R
S
3.94  
4.72  
4.42  
4.85  
Symbol  
TestConditions  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
IS  
VGS = 0 V  
72  
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
288  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250  
ns  
µC  
A
I = 25A  
-Fdi/dt = 100 A/µs  
VR = 100 V  
QRM  
IRM  
1.2  
8
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFN 72N55Q2  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
180  
160  
140  
120  
100  
80  
72  
63  
54  
45  
36  
27  
18  
9
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
0
2
4
6
8
10 12 14 16 18 20  
0
0
0
1
2
3
4
5
6
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
72  
63  
54  
45  
36  
27  
18  
9
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
1.8  
1.6  
1.4  
1.2  
1
ID = 72A  
ID = 36A  
0.8  
0.6  
0.4  
0
2
4
6
8
10  
12  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1
TJ = 25ºC  
0.8  
20  
40  
60  
80 100 120 140 160 180  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFN 72N55Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
3.5  
0.2  
0
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100 120 140 160  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
200  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 275V  
ID = 36A  
G = 10mA  
I
60  
40  
TJ = 125ºC  
0.4  
20  
TJ = 25ºC  
0.8  
0
0.6  
1
1.2  
1.4  
1.6  
0
40  
80  
120  
160  
200  
240  
280  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
100000  
10000  
1000  
0.16  
0.14  
0.12  
0.1  
f = 1MHz  
C
iss  
0.08  
0.06  
0.04  
0.02  
0
C
C
oss  
rss  
100  
1
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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