VTP Process Photodiodes
VTP8651
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI-DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
Planar silicon photodiode in a molded plastic,
infrared transmitting package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning devices side by side. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP8651
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
35
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
55
.24
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
300
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
30
50
D
R
Shunt Resistance
.15
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.045
.50
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
725
33
1150
nm
range
λ
925
140
±50
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
2.0 x 10 (Typ.)
12
1.4 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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