VTP Process Photodiodes
VTP8551
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI-DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Planar silicon photodiode in a transparent
molded plastic package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning these devices side by side. These
diodes exhibit low dark current under reverse
bias and fast speed of response.
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP8551
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
50
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
70
µA
%/°C
mV
SC
TC I
I
.20
SC
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
30
50
D
R
Shunt Resistance
.15
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.05
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
33
1150
nm
range
λ
925
140
±50
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.8 x 10 (Typ.)
12
1.5 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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