VTP Process Photodiodes
VTP7840
PACKAGE DIMENSIONS inch (mm)
CASE 51 LENSED SIDELOOKER
CHIP ACTIVE AREA: .0082 in2 (5.27 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transfer molded,
ABSOLUTE MAXIMUM RATINGS
large lensed sidelooker package. The dark
package material filters out visible light but
passes infrared. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP7840
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
50
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
70
.20
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
V Temperature Coefficient
OC
H = 100 fc, 2850 K
2850 K
325
-2.0
OC
TC V
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
@ Peak
20
40
nA
GΩ
D
R
Shunt Resistance
0.25
.55
SH
C
Junction Capacitance
Sensitivity
pF
J
S
A/W
R
λ
Spectral Application Range
Spectral Response - Peak
Forward Voltage
725
1150
nm
range
λ
925
1.0
nm
p
V
@ 10 mA
V
BR
1/2
θ
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
±48
Degrees
W ⁄ Hz
cm Hz / W
-14
NEP
D*
5.3 x 10 (Typ.)
12
5.1 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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