VTP Process Photodiodes
VTP7210
PACKAGE DIMENSIONS inch (mm)
CASE 7 LATERAL
CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a lensed
ABSOLUTE MAXIMUM RATINGS
sidelooking package. The package material
filters out visible light but passes infrared. These
diodes exhibit low dark current under reverse
bias and fast speed of response.
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP7210
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
5
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
7
µA
%/°C
mV
SC
TC I
I
.26
350
-2.0
SC
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
35
25
D
R
Shunt Resistance
7
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.015
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
700
30
1150
nm
range
λ
925
140
±58
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.9 x 10 (Typ.)
11
5.3 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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