VTP Process Photodiodes
VTP1232
PACKAGE DIMENSIONS inch (mm)
(Also available in infrared transmitting visible
blocking version)
CASE 26 T-1¾
CHIP ACTIVE AREA: .0036 in2 (2.326 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
This photodiode features the largest detection
area available in a clear, endlooking T-1¾
package. Combined with excellent dark current,
it can fulfill the demands of many difficult
applications.
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP1232
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
100
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
µA
SC
TC I
I
0.20
%/°C
SC
SC
2
Re
Responsivity
880 nm
0.06
.42
0.076
A/(W/cm )
mV
V
Open Circuit Voltage
H = 100 fc, 2850 K
2850 K
OC
TC V
V
Temperature Coefficient
-2.0
.18
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 0 V
25
.30
D
C
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
nF
J
λ
400
1100
nm
range
λ
920
nm
p
S
@ Peak
0.60
A/W
R
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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