.050" NPN Phototransistors
VTT1115, 16, 17
TO-46 Lensed Package
PACKAGE DIMENSIONS inch (mm)
CASE 3 TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
Maximum Temperatures
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
Continuous Power Dissipation:
Derate above 30°C:
250 mW
3.12 mW/°C
Maximum Current:
200 mA
260°C
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Light Current
Dark Current
Rise/Fall Time
t /t
Angular
l
l
V
V
V
CE(SAT)
C
CEO
BR(CEO)
BR(ECO)
R F
Response θ
1/2
Part Number
l = 100 µA
l = 100 µA
H = 0
l = 1.0 mA
H = 400 fc
l = 1.0 mA
C
C
E
C
mA
H = 0
H
H = 0
R = 100 Ω
L
2
fc (mW/cm )
= 5.0 V
(nA)
V
CE
V
CE
Min.
Max.
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
Max. (Volts)
VTT1115
VTT1116
VTT1117
1.0
2.0
4.0
—
—
—
20 (1)
100
100
100
10
10
10
30
30
30
6.0
4.0
4.0
0.40
0.40
0.40
5.0
8.0
8.0
±15°
±15°
±15°
20 (1)
20 (1)
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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