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VUB72

型号：

VUB72

描述：

三相整流桥带制动斩波器[ Three Phase Rectifier Bridge With Brake Chopper ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

89 K

下载PDF手册
VUB 72  
VRRM = 1200/1600 V  
IdAVM = 110 A  
Three Phase Rectifier Bridge  
with Brake Chopper  
5
4
2
1
NTC  
D
T
D1  
D2  
D3  
D4  
D5  
D6  
10  
9
7
6
Features  
Input Rectifier D1 - D6  
• three phase mains rectifier  
• brake chopper:  
- IGBT with low saturation voltage  
- HiPerFREDTM free wheeling diode  
• module package:  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
VUB 72 -12 NO1  
VUB 72 -16 NO1  
1200  
1600  
V
V
- high level of integration  
- solder terminals for PCB mounting  
- UL registered E72873  
IFAV  
IDAVM  
IFSM  
TC = 80°C; sine 180°  
40  
110  
530  
A
A
A
TC = 80°C; rectangular; d = 1/3; bridge  
TVJ = 25°C; t = 10 ms; sine 50 Hz  
- isolated DCB ceramic base plate  
- large creepage and strike distances  
- high reliability  
Ptot  
TC = 25°C  
100  
W
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
drives with  
• mains input  
• DC link  
• inverter or chopper feeding the machine  
• motor and generator/brake operation  
VF  
IR  
IF = 25 A;  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
1.0  
0.9  
1.1  
V
V
;
TVJ = 25°C  
0.02 mA  
mA  
VR = 0.8• VRRM; TVJ = 125°C  
0.4  
RthJC  
RthJH  
per diode  
with heat transfer paste  
1.2 K/W  
1.42 K/W  
Chopper Diode D  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
IF25  
IF80  
DC; TC = 25°C  
DC; TC = 80°C  
25  
15  
A
A
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
VF  
IR  
IF = 25 A; TVJ = 25°C  
TVJ = 125°C  
2.7  
2.0  
3.1  
V
V
VR = VRRM  
;
TVJ = 25°C  
TVJ = 125°C  
0.1 mA  
mA  
0.1  
IRM  
trr  
IF = 15A; di /dt = -400 A/µs; TVJ = 125°C  
VR = 600 VF  
16  
130  
A
ns  
RthJC  
RthJH  
2.3 K/W  
3.12 K/W  
with heat transfer paste  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 4  
VUB 72  
Chopper Transistor T  
Equivalent Circuits for Simulation  
Conduction  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC80  
DC; TC = 25°C  
DC; TC = 80°C  
50  
35  
A
A
D1 - D6  
ICM  
VCEK  
VGE = 15 V; R = 39 Ω; TVJ = 125°C  
50  
VCES  
A
RBSOA; L = 1G00 µH  
Diode (typ. at TJ = 125°C)  
V0 = 0.85 V; R0 = 7 mΩ  
tSC  
(SCSOA)  
VGE = 15 V; VCE = 900 V; TVJ = 125°C  
RG = 39 Ω; non repetitive  
10  
µs  
T/D  
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
V0 = 1.0 V; R0 = 45 mΩ  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
(TVJ = 25°C, unless otherwise specified)  
Free Wheeling Diode (typ. at TJ = 125°C)  
V0 = 1.25 V; R0 = 32 mΩ  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ  
=
25°C  
1.9  
2.1  
2.4  
V
V
TVJ = 125°C  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.1 mA  
mA  
0.1  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
80  
50  
440  
50  
3.8  
2.0  
ns  
ns  
ns  
ns  
mJ  
mJ  
Dimensions in mm (1 mm = 0.0394")  
Inductive load, TVJ = 125°C  
CE = 600 V; IC = 25 A  
V
±
VGE = 15 V; RG = 39 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE= 600 V; VGE = 15 V; IC = 35 A  
2.0  
150  
nF  
nC  
RthJC  
RthJH  
0.6 K/W  
1.2 K/W  
with heat transfer paste, see mounting instructions  
Temperature Sensor NTC  
Symbol  
Conditions  
Characteristic Values  
typ.  
1
T
1
R25  
B25/100  
T = 25°C  
2.2  
100  
kΩ  
K
(
B25/100  
)
298K  
R(T) = R25 • e  
Module  
Symbol  
IRMS  
Conditions  
Maximum Ratings  
per pin  
100  
A
TVJ  
Tstg  
-40...+150  
-40...+125  
°C  
°C  
VISOL  
Md  
IISOL ≤ 1 mA; 50/60 Hz; t = 1 min  
3600  
V~  
Mounting torque (M5)  
2 - 2.5  
Nm  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
dA, dS  
5
mm  
g
Weight  
35  
© 2003 IXYS All rights reserved  
2 - 4  
VUB 72  
Input Rectifier D1-D6  
500  
A
80  
VR= 0.8VRRM  
A
70  
typ.  
400  
60  
IFSM  
IF  
TVJ= 25°C  
50  
40  
30  
20  
10  
0
TVJ=150°C  
300  
200  
100  
0
TVJ= 45°C  
max.  
TVJ= 150°C  
0.001  
0.01  
0.1  
1
s
0.0  
0.5  
1.0  
1.5  
2.0  
V
t
VF  
Fig. 1 Forwardcurrentversusvoltage  
drop per rectifier diode  
Fig. 2 Surgeoverloadcurrentper  
rectifierdiode  
10000  
80  
A
70  
VR= 0 V  
A2s  
60  
Id(AV)M  
1000  
50  
40  
30  
20  
10  
0
TVJ= 45°C  
I2t  
TVJ= 150°C  
100  
10  
1
10  
0
40  
80  
120  
160  
ms  
°C  
t
TH  
Fig. 3 Maximumforwardcurrent  
Fig. 4 I2t versus time  
perrectifierdiode  
versusheatsinktemperature(Rectifierbridge)  
140  
Note:  
W
transient thermal impedance  
see next page  
120  
R
[K/W]  
thHA  
0.5  
1
100  
P
tot 80  
60  
40  
20  
0
1.5  
2
3
4
6
0
10  
20  
30  
40  
50  
60  
0
40  
80  
120  
160  
°C  
A
TA  
Id(AV)M  
Fig. 5 Power dissipation versus direct output current and ambient temperature (Rectifier bridge)  
© 2003 IXYS All rights reserved  
3 - 4  
VUB 72  
Chopper T - D  
120  
50  
A
VGE = 15 V  
A
100  
40  
TVJ = 25°C  
IF  
TVJ = 125°C  
IC  
80  
60  
40  
20  
0
TVJ = 125°C  
30  
20  
10  
0
TVJ = 25°C  
0
1
2
3
4
5
6 V  
7
0
1
2
3
V
4
VF  
VCE  
Fig. 6 Typ. IGBT output characteristics  
Fig. 7 Typ. forward characteristics  
of free wheeling diode  
6
1200  
ns  
800  
ns  
4
VCE = 600 V  
VCE = 600 V  
GE = ±15 V  
Eoff  
mJ  
mJ  
3
VGE = ±15 V  
V
1000  
IC 35 A  
=
RG = 39 Ω  
TVJ = 125°C  
Eoff  
Eoff  
600  
t
t
TVJ = 125°C  
4
800  
600  
400  
200  
0
Eoff  
2
1
0
400  
200  
0
td(off)  
2
0
td(off)  
tf  
tf  
10  
A
0
20  
40  
60  
80  
20  
30  
40  
50  
60  
70 Ω 80  
IC  
RG  
Fig. 8 Typ. IGBT turn off energy and switching  
times versus collector current  
Fig. 9 Typ. IGBT turn off energy and switching  
times versus gate resistor  
10  
Temperature Sensor NTC  
K/W  
2300  
1
ZthJC  
0.1  
2200  
Ω
chopper diode  
rectifier diode  
IGBT  
R
2100  
0.01  
0.001  
2000  
1900  
single pulse  
0.0001  
0.00001 0.0001 0.001  
0.01  
0.1  
1
10  
s
0
25  
50  
75  
100  
125  
150  
°C  
t
T
Fig. 10 Typ. transient thermal impedance  
© 2003 IXYS All rights reserved  
Fig. 11 Typ. thermistorresistance versus  
temperature  
4 - 4  
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