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VUO155-16NO1

型号:

VUO155-16NO1

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

3 页

PDF大小:

61 K

VUO 120  
VUO 155  
IdAVM = 121/157 A  
VRRM = 1200-1600 V  
Three Phase  
Rectifier Bridge  
M1/O1  
W5  
VRRM Type  
VRRM Type  
V
V
A6  
E6  
K6  
option  
W6  
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1  
1200 VUO 155-12 NO1 1600 VUO 155-16 NO1  
M10/O10  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
VUO 120  
1200/1600  
121  
VUO155  
1200/1600 V  
Soldering connections for PCB  
VRRM  
IdAVM  
mounting  
Isolation voltage 3600 V~  
Convenient package outline  
UL registered E 72873  
TC = 75°C, sinusoidal 120°  
157  
A
IFSM  
I2t  
TVJ = 45°C,  
TVJ = 150°C,  
t = 10 ms, VR = 0 V  
t = 10 ms, VR = 0 V  
650  
580  
850  
760  
A
A
TVJ = 45°C,  
TVJ = 150°C,  
t = 10 ms, VR = 0 V  
t = 10 ms, VR = 0V  
2110  
1680  
3610  
2880  
A
A
Case and potting UL94 V-0  
Ptot  
TC = 25°C per diode  
150  
190  
W
Applications  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Input Rectifier for Drive Inverters  
Advantages  
VISOL  
50/60 Hz  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
IISOL 1 mA  
Easy to mount with two screws  
Suitable for wave soldering  
High temperature and power cycling  
Md  
Mounting torque  
(M5)  
(10-32 unf)  
2-2.5  
18-22  
Nm  
lb.in.  
capability  
dS  
dA  
a
Creep distance on surface  
Strike distance in air  
Maximum allowable acceleration  
12.7  
9.4  
50  
mm  
mm  
m/s2  
Dimensions in mm (1 mm = 0.0394")  
Weight  
Symbol  
typ.  
80  
g
Test Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IR  
VR = VRRM  
VR = VRRM  
,
,
TVJ = 25°C  
TVJ = 150°C  
0.3 mA  
5
mA  
VF  
IF = 150 A,  
TVJ = 25°C  
VUO 120  
VUO 155  
1.59  
1.49  
V
V
VF0  
rT  
For power-loss calculations only VUO 120  
0.80  
0.75  
6.1 mΩ  
4.6 mΩ  
V
V
VUO 155  
TVJ = 150°C  
VUO 120  
VUO 155  
RthJC  
RthJH  
per diode  
VUO 120  
VUO 155  
1.0 K/W  
0.8 K/W  
VUO 120  
VUO 155  
1.3 K/W  
1.1 K/W  
R25 (option)  
Siemens S 891/2,2/+9  
2.2 kΩ  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2002 IXYS All rights reserved  
1 - 3  
VUO 120  
150  
A
700  
A
104  
A2s  
50 Hz, 80% VRRM  
VR = 0 V  
600  
I2t  
IFSM  
120  
90  
60  
30  
0
IF  
500  
400  
300  
200  
100  
0
TVJ = 45°C  
TVJ = 150°C  
TVJ 25°C  
=
TVJ = 45°C  
TVJ = 150°C  
TVJ = 150°C  
103  
V
0.0  
0.5  
1.0  
1.5  
2.0  
0.001  
0.01  
0.1  
s
1
1
2
3
4
5 6 7 10  
ms  
t
VF  
t
Fig. 1 Forward current versus voltage  
drop per diode  
Fig. 2 Surge overload current  
Fig. 3 I2t versus time per diode  
150  
140  
A
RthKA  
:
W
Ptot  
120  
0.7 KW  
KW  
1.4 KW  
1
100  
Id(AV)M  
100  
2
3
5
KW  
KW  
KW  
80  
60  
40  
20  
0
50  
0
0
20  
40  
60  
80  
100 120 A 0 20 40 60 80 100 120 140 °C  
Tamb  
0
20 40 60 80 100 120 140 °C  
TC  
Id(AV)M  
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°  
Fig. 5 Max. forward current versus  
case temperature  
1.2  
K/W  
1.0  
0.8  
0.6  
0.4  
0.2  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.003521  
0.1479  
0.5599  
0.2887  
0.01  
0.05  
0.14  
0.5  
VUO 120  
0.0  
0.01  
0.1  
1
10  
s
t
Fig. 6 Transient thermal impedance junction to case  
© 2002 IXYS All rights reserved  
2 - 3  
VUO 155  
150  
A
700  
A
104  
A2s  
50 Hz, 80% VRRM  
VR = 0 V  
600  
I2t  
120  
90  
60  
30  
0
IFSM  
IF  
500  
400  
300  
200  
100  
0
TVJ = 45°C  
TVJ = 45°C  
TVJ = 150°C  
TVJ 25°C  
=
TVJ = 150°C  
TVJ = 150°C  
103  
V
0.0  
0.5  
1.0  
1.5  
2.0  
0.001  
0.01  
0.1  
s
1
1
2
3
4
5 6 7 10  
ms  
t
VF  
t
Fig. 1 Forward current versus voltage  
Fig. 2 Surge overload current  
Fig. 3 I2t versus time per diode  
drop per diode  
180  
A
160  
RthKA  
:
W
150  
0.7 KW  
KW  
1.4 KW  
140  
1
Id(AV)M  
120  
100  
80  
60  
40  
20  
0
2
3
5
KW  
KW  
KW  
Ptot  
100  
50  
0
0
20 40 60 80 100 120 140  
Id(AV)M  
0
20 40 60 80 100 120 140 °C  
Tamb  
0
20 40 60 80 100 120 140 °C  
TC  
A
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°  
Fig. 5 Max. forward current versus  
case temperature  
1.0  
K/W  
0.8  
0.6  
0.4  
0.2  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.002817  
0.1183  
0.4479  
0.231  
0.01  
0.05  
0.14  
0.5  
VUO 155  
0.0  
0.01  
0.1  
1
10  
s
t
Fig. 6 Transient thermal impedance junction to case  
© 2002 IXYS All rights reserved  
3 - 3  
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