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3SK166A

型号：

3SK166A

描述：

砷化镓N沟道双栅场效应管MES[ GaAs N-channel Dual Gate MES FET ]

品牌：

SONY[ SONY CORPORATION ]

页数：

5 页

PDF大小：

75 K

下载PDF手册
3SK166A  
GaAs N-channel Dual Gate MES FET  
For the availability of this product, please contact the sales office.  
Description  
The 3SK166A is an N-channel dual gate GaAs  
MES FET for UHF band low-noise amplification. The  
circuit matching is easier to be made for all UHF  
band, resulting in the excellent performance, due to  
the optimal design of input impedance.  
Features  
• Low voltage operation  
• Low noise: NF = 1.2dB (typ.) at 800MHz  
• High gain: Ga = 20dB (typ) at 800MHz  
• High stability  
Application  
UHF band amplifier, oscillator  
Structure  
GaAs N-channel dual-gate metal semiconductor field-effect transistor  
Absolute Maximum Ratings (Ta = 25°C)  
• Drain to source voltage  
• Gate 1 to source voltage  
• Gate 2 to source voltage  
• Drain current  
VDSX  
VG1S  
VG2S  
ID  
8
V
V
–6  
–6  
V
80  
mA  
mW  
°C  
°C  
• Allowable power dissipation  
• Channel temperature  
• Storage temperature  
PD  
150  
Tch  
Tstg  
150  
–55 to +150  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E96Y11-PS  
3SK166A  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
VDS = 8V  
Drain cut-off current  
IDSX  
VG1S = –4V  
VG2S = 0V  
100  
–20  
–20  
80  
µA  
VG1S = –5V  
VG2S = 0V  
VDS = 0V  
Gate 1 to source current  
Gate 2 to source current  
Drain saturation current  
Gate 1 to source cut-off voltage  
Gate 2 to source cut-off voltage  
IG1SS  
IG2SS  
IDSS  
µA  
µA  
mA  
V
VG2S = –5V  
VG1S = 0V  
VDS = 0V  
VDS = 5V  
VG1S = 0V  
VG2S = 0V  
20  
–1  
–1  
VDS = 5V  
VG1S (OFF) ID = 100µA  
VG2S = 0V  
–4  
VDS = 5V  
VG2S (OFF) ID = 100µA  
VG1S = 0V  
–4  
V
VDS = 5V  
ID = 10mA  
Forward transfer admittance  
gm  
25  
40  
ms  
VG2S = 1.5V  
f = 1kHz  
VDS = 5V  
Ciss  
Input capacitance  
Feedback capacitance  
Noise figure  
1.3  
25  
2.0  
40  
pF  
fF  
ID = 10mA  
VG2S = 1.5V  
f = 1MHz  
Crss  
VDS = 5V  
NF  
1.2  
20  
2.5  
dB  
dB  
ID = 10mA  
VG2S = 1.5V  
f = 800MHz  
Associated gain  
IDSS classification  
Ga  
18  
Product name classification  
3SK166A-0  
IDSS RANK  
20 to 80mA  
45 to 80mA  
3SK166A-2  
Typical Characteristics (Ta = 25°C)  
ID vs. VDS  
ID vs. VG1S  
100  
100  
80  
70  
60  
40  
20  
(VG2S = 1.5V)  
(VDS = 5V)  
VG2S  
= 1.5V  
VG1S  
= 0V  
1.0V  
80  
60  
40  
20  
0
0.5V  
–0.2V  
–0.4V  
–0.6V  
0V  
–0.5V  
–1.5V  
–0.8V  
–1.0V  
–1.2V  
–1.4V  
–1.6V  
0
2
4
6
8
–2.0  
–1.5  
–1.0  
–0.5  
0
VDS – Drain to source voltage [V]  
VG1S – Gate 1 to source voltage [V]  
– 2 –  
3SK166A  
ID vs. VG2S  
gm vs. VG1S  
100  
80  
60  
40  
20  
0
100  
80  
60  
50  
40  
20  
(VDS = 5V)  
(VDS = 5V)  
VG2S  
= 1.5V  
VG1S  
= 0V  
–0.2V  
–0.4V  
1.0V  
–0.6V  
–0.8V  
–1.0V  
0.5V  
0V  
–1.2V  
–1.4V  
–0.5V  
–1.0V  
–2.0  
–1.5  
–1.0  
–0.5  
0
–2.0  
–1.5  
–1.0  
–0.5  
0
VG2S – Gate 2 to source voltage [V]  
VG1S – Gate 1 to source voltage [V]  
NF vs. VG1S  
Ga vs. VG1S  
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
(VDS = 5V, f = 800MHz)  
(VDS = 5V, f = 800MHz)  
VG2S = 1.5V  
1.0V  
1.5V  
VG2S = 0.5V  
1.0V  
1.5V  
0
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9  
–1.8 –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 –1.0 –0.9  
VG1S – Gate 1 to source voltage [V]  
VG1S – Gate 1 to source voltage [V]  
NF, Ga vs. ID  
NF, Ga vs. f  
3.0  
30  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
30  
(VDS = 5V, VG2S = 1.5V, f = 800MHz)  
(VDS = 5V, VG2S = 1.5V, ID = 10mA)  
2.5  
2.0  
1.5  
1.0  
0.5  
0
25  
20  
15  
10  
5
25  
20  
15  
10  
5
Ga  
Ga  
NF  
NFmin  
0
0
0
2
4
6
8
10 12 14 16 18 20 22  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
f – Frequency [GHz]  
ID – Drain current [mA]  
– 3 –  
3SK166A  
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)  
(Z0 = 50Ω)  
S11  
S21  
S12  
S22  
f
(MHz)  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
0.996  
0.988  
0.969  
0.948  
0.927  
0.899  
0.873  
0.845  
0.816  
0.785  
0.754  
0.723  
0.694  
0.669  
0.643  
0.621  
0.601  
0.583  
0.565  
0.545  
–5.0  
–9.8  
3.807  
3.783  
3.726  
3.670  
3.602  
3.507  
3.414  
3.333  
3.244  
3.146  
3.061  
2.965  
2.874  
2.800  
2.709  
2.636  
2.545  
2.464  
2.364  
2.283  
172.8  
165.5  
158.4  
151.5  
144.5  
137.9  
131.4  
125.2  
118.9  
112.8  
106.9  
101.2  
95.4  
90.0  
84.2  
78.5  
72.8  
67.0  
61.3  
55.8  
0.002  
0.005  
0.007  
0.009  
0.010  
0.011  
0.013  
0.013  
0.015  
0.016  
0.016  
0.016  
0.017  
0.017  
0.018  
0.018  
0.020  
0.022  
0.026  
0.028  
86.5  
87.7  
87.3  
85.6  
81.9  
84.3  
83.5  
82.3  
86.3  
86.8  
88.0  
92.4  
95.8  
97.9  
103.3  
111.5  
119.2  
129.3  
132.1  
136.6  
0.936  
0.933  
0.930  
0.927  
0.925  
0.922  
0.923  
0.921  
0.926  
0.924  
0.920  
0.921  
0.921  
0.924  
0.925  
0.926  
0.927  
0.924  
0.915  
0.912  
–1.9  
–4.0  
–6.1  
–14.8  
–19.8  
–24.6  
–29.3  
–33.5  
–37.5  
–41.2  
–44.5  
–47.6  
–50.3  
–53.2  
–55.6  
–58.1  
–60.4  
–62.3  
–64.5  
–66.6  
–68.1  
–8.2  
–10.2  
–12.1  
–14.2  
–16.3  
–18.2  
–20.3  
–22.3  
–24.4  
–26.5  
–28.9  
–31.4  
–33.9  
–36.9  
–39.5  
–42.4  
–45.0  
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)  
Gamma Optimum  
f
Rn  
(Ω)  
NFmin  
(dB)  
(MHz)  
ANG  
MAG  
0.29  
0.41  
0.52  
0.64  
0.75  
0.86  
0.97  
1.07  
1.18  
1.28  
1.39  
1.49  
1.59  
1.68  
1.78  
1.88  
1.97  
2.06  
2.15  
0.89  
0.85  
0.81  
0.77  
0.73  
0.70  
0.67  
0.64  
0.61  
0.59  
0.57  
0.54  
0.52  
0.50  
0.48  
0.45  
0.43  
0.40  
0.38  
7.3  
10.6  
13.7  
16.7  
19.5  
22.3  
24.9  
27.5  
30.1  
32.6  
35.2  
37.8  
40.5  
43.3  
46.3  
49.3  
52.6  
56.0  
59.7  
30.3  
29.7  
29.2  
28.7  
28.3  
27.8  
27.4  
27.0  
26.7  
26.3  
26.0  
25.8  
25.5  
25.3  
25.1  
25.0  
24.9  
24.8  
24.7  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
1300  
1400  
1500  
1600  
1700  
1800  
1900  
2000  
– 4 –  
3SK166A  
Package Outline  
Unit: mm  
M-254  
2.9 ± 0.2  
1.9  
( 0.95 )  
( 0.95 )  
+ 0.2  
1.1 – 0.1  
2
3
0 to 0.1  
4
1
+ 0.1  
0.4 – 0.05  
+ 0.1  
0.6 – 0.05  
+ 0.1  
0.10 – 0.01  
( 0.95 )  
( 0.85 )  
1.8  
1. Source  
2. Gate1  
3. Gate2  
4. Drain  
SONY CODE  
M-254  
0.01g  
PACKAGE MASS  
EIAJ CODE  
JEDEC CODE  
– 5 –  
厂商 型号 描述 页数 下载

ETC

 		3SK101 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

 		3SK102 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

 		3SK107 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107E 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107F 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK107G 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

 		3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

 		3SK108Q 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108R 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

 		3SK108S 晶体管| MOSFET | N沟道| 20V V（ BR ） DSS |我30MA （D ） | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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