请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

PZTA29

型号：

PZTA29

描述：

需要极高的电流增益集电极电流500mA的应用[ Applications requiring extremely high current gain at collector currents to 500mA ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

4 页

PDF大小：

82 K

下载PDF手册
PZTA29  
NPN Darlington Transistor  
•
This device designed for applications requiring extremely high  
current gain at collector currents to 500mA.  
•
Sourced from process 03.  
4
3
2
1
SOT-223  
1. Base 2.4. Collector 3. Emitter  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
100  
Units  
V
V
V
Collector-Emitter Voltage  
V
V
CES  
CBO  
EBO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
12  
V
I
- Continuous  
800  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 to +150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 100µA, V = 0  
100  
100  
12  
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
BE  
= 100µA, I = 0  
E
= 10µA, I = 0  
V
C
I
I
I
V
V
V
= 80V, I = 0  
100  
500  
100  
nA  
nA  
nA  
CB  
CE  
EB  
E
Collector Cutoff Current  
= 80V, V = 0  
BE  
CES  
Emitter Cut-off Current  
= 10V, I = 0  
C
EBO  
On Characteristics  
h
DC Current Gain  
V
V
= 5.0V, I = 10mA  
10,000  
10,000  
FE  
CE  
CE  
C
= 5.0V, I = 100mA  
C
V
Collector-Emitter Saturation Voltage  
I
I
= 10mA, I = 0.01mA  
1.2  
1.5  
V
V
CE(sat)  
BE(on)  
C
C
B
= 100mA, I = 0.1mA  
B
V
Base-Emitter On Voltage  
I
= 100mA, V = 5.0V  
2.0  
V
C
CE  
Small Signal characteristics  
f
Current Gain Bandwidth Product  
Output Capacitance  
I
= 10mA, V = 5.0V, f = 100MHz  
125  
MHz  
pF  
T
C
CE  
C
V
= 1.0V, I = 0, f = 1.0MHz  
CB E  
8.0  
obo  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
©2005 Fairchild Semiconductor Corporation  
PZTA29 Rev. A  
1
www.fairchildsemi.com  
Thermal Characteristics  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
1,000  
8.0  
mW  
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
125  
°C/W  
θJA  
2
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm  
2
www.fairchildsemi.com  
PZTA29 Rev. A  
Mechanical Dimensions  
SOT-223  
Dimensions in Millimeters  
3
www.fairchildsemi.com  
PZTA29 Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FPS™  
FRFET™  
GlobalOptoisolator™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
PowerTrench®  
QFET®  
SPM™  
Stealth™  
A
CEx™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic®  
TINYOPTO™  
TruTranslation™  
UHC™  
HiSeC™  
QS™  
EcoSPARK™  
I2C™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
E2CMOS™  
i-Lo™  
ImpliedDisconnect™  
MSXPro™  
OCX™  
OCXPro™  
EnSigna™  
FACT™  
FACT Quiet Series™  
OPTOLOGIC®  
OPTOPLANAR™  
PACMAN™  
UltraFET®  
UniFET™  
VCX™  
Across the board. Around the world.™  
The Power Franchise®  
Programmable Active Droop™  
SILENT SWITCHER®  
SMART START™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I15  
4
www.fairchildsemi.com  
PZTA29 Rev. A  
厂商 型号 描述 页数 下载

SECOS

 		PZT13003 1.5A ， 700V NPN硅中功率晶体管[ 1.5A , 700V NPN Silicon Medium Power Transistor ] 2 页

SECOS

 		PZT157 PNP晶体管的硅平面高性能晶体管[ PNP Transistor Silicon Planar High Performance Transistor ] 2 页

SECOS

 		PZT158 硅平面高电流晶体管[ Silicon Planar High Current Transistor ] 2 页

WEITRON

 		PZT159 PNP硅平面高电流晶体管[ PNP Silicon Planar High Current Transistor ] 4 页

SECOS

 		PZT159 高电流晶体管[ High Current Transistor ] 2 页

UTC

 		PZT1816 HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

 		PZT1816G-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

 		PZT1816L-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

 		PZT1816_15 [ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

SECOS

 		PZT194 硅平面中功率晶体管[ Silicon Planar Medium Power Transistor ] 2 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.218074s