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IXGR60N60C2

型号：

IXGR60N60C2

描述：

光速2TM系列（电隔离背面）[ Lightspeed 2TM Series (Electrically Isolated Back Surface) ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

613 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS247TM  
IXGR 60N60C2  
IXGR 60N60C2D1  
VCES  
IC25  
= 600 V  
= 75 A  
= 2.7 V  
= 35 ns  
VCE(sat)  
tfi(typ)  
Lightspeed 2TM Series  
(Electrically Isolated Back Surface)  
Preliminary Data Sheet  
IXGR_C2  
IXGR_C2D1  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247  
(IXGR)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
C
AB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
G = Gate  
C = Collector  
E = Emitter  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 110°C (IXGR60N60C2D1)  
TC = 25°C, 1 ms  
75  
48  
39  
A
A
A
A
Features  
z
300  
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE ≤ 600 V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
250  
W
- drive simplicity  
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Applications  
TJM  
Tstg  
z
Uninterruptible power supplies (UPS)  
z
Switched-mode and resonant-mode  
VISOL  
50/60 Hz RMS, t = 1m  
2500  
V
power supplies  
z
AC motor speed control  
Weight  
5
g
z
DC servo and robot drives  
z
DC choppers  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Advantages  
z
Easy assembly  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
High power density  
z
Very fast switching speeds for high  
frequency applications  
BVCES  
VGE(th)  
I
= 1 mA, V = 0 V  
600  
3.0  
V
V
ICC = 250 µA,GVECE = VGE  
5.0  
ICES  
VCE = V  
GR60N60C2  
GR60N60C2D1  
50  
650  
µA  
µA  
VGE = 0 CVES  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
2.7  
nA  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
T = 25°C  
TJJ = 125°C  
2.3  
2.0  
V
V
© 2004 IXYS All rights reserved  
DS99051D(05/04)  
IXGR 60N60C2  
IXGR 60N60C2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS 247 Outline  
IC = 50 A; VCE = 10 V,  
Note 1  
40  
55  
S
Cies  
3900  
280  
320  
97  
pF  
pF  
pF  
pF  
Coes  
VCE= 25 V, VGE = 0 V, f = 1 MHz  
60N60C2  
60N60C2D1  
Cres  
Qg  
140  
28  
35  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 2.0 Ω  
td(on)  
tri  
td(off)  
tfi  
18  
25  
ns  
ns  
95 150 ns  
35 ns  
0.49 0.8 mJ  
Eoff  
td(on)  
tri  
18  
25  
1.6  
130  
80  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
VCE = 400 V, RG = Roff = 2.0 Ω  
Eon  
td(off)  
tfi  
ns  
Eoff  
0.92  
mJ  
RthJ-DCB  
RthJC  
(Note 2)  
(Note 3)  
0.25  
K/W  
0.50 K/W  
K/W  
RthCS  
0.15  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 60 A, VGE = 0 V,  
Note 1  
2.0  
V
A
TJ = 150°C  
1.39  
IRM  
IF = 60 A, V = 0 V, -diF/dt = 100 A/µ TJ = 100°C  
VR = 100 VGE  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
8.3  
trr  
35  
ns  
0.85 K/W  
RthJC  
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate  
3: RthJC is the thermal resistance junction-to-external side of DCB substrate  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,534,343  
6,583,505  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
IXGR 60N60C2  
IXGR 60N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
17 5  
15 0  
12 5  
10 0  
75  
VGE = 15V  
VGE = 15V  
13V  
9V  
13V  
11V  
9V  
11V  
7V  
7V  
5V  
50  
5V  
3
25  
0
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3.5  
1
25  
3.5  
1.5  
2
2.5  
3
3.5  
4
4.5  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
1. 2  
1. 1  
1
VG E = 15V  
13V  
9V  
11V  
VG E = 15V  
I C= 100A  
7V  
0.9  
0.8  
0.7  
0.6  
0.5  
I C= 50A  
I C= 25A  
5V  
0
1
1.5  
2
2.5  
3
3.5  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
5
4.5  
4
200  
17 5  
15 0  
12 5  
10 0  
75  
T J = 25ºC  
3.5  
3
2.5  
2
I C =100A  
TJ= 125  
25  
-40  
ºC  
50  
50A  
25A  
º
C
C
º
1. 5  
25  
1
0
6
7
8
9
10  
11 12 13  
14 15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2004 IXYS All rights reserved  
IXGR 60N60C2  
IXGR 60N60C2D1  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
6
5
4
3
2
º
TJ = 125 C  
I C = 100A  
VGE = 15V  
º
TJ = -40 C  
VCE = 400V  
º
25 C  
º
125 C  
I C= 75A  
I C = 50A  
1
I C = 25A  
0
0
0
20  
0
25  
50  
75  
100  
125  
150  
175 200  
2
25  
0
4
6
8
10  
12  
14  
16  
125  
40  
R G - Ohms  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on Ic  
5
4
3
2
5
4
3
2
R G = 3 Ω.  
RG = 10 Ω - - - - -  
R G = 3 Ω  
R G= 10 Ω - - - - -  
I C = 100A  
VG E = 15V  
C E = 400V  
VG E = 15V  
VC E = 400V  
V
º
TJ = 125 C  
I C = 75A  
I C = 50A  
I C = 25A  
º
TJ = 25 C  
1
1
0
0
30  
40  
50  
60  
70  
80  
90  
100  
50  
75  
100  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
15  
12  
9
10 0 0 0  
10 0 0  
10 0  
f = 1M Hz  
VCE = 300V  
I C = 50A  
I G = 10mA  
C
ies  
C
oes  
6
C
res  
3
0
10  
20  
40  
60  
80  
100  
120  
140  
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGR 60N60C2  
IXGR 60N60C2D1  
Fig. 13. Maximum Transient Thermal Resistance  
0.55  
0.5  
0.45  
0.4  
0.35  
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
IXGR 60N60C2  
IXGR 60N60C2D1  
160  
A
140  
4000  
nC  
80  
T = 100°C  
VVRJ= 300V  
T = 100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ= 25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IFF= 30A  
IF= 60A  
40  
20  
0
TVJ=150°C  
A/µs  
0
1
2
V
100  
1000  
0
200 400 600 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 15. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 16. Peak reverse current IRM  
versus -diF/dt  
Fig. 14. Forward current IF versus VF  
2.0  
140  
20  
V
1.6  
µs  
T = 100°C  
VVRJ= 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
T = 100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 17. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 18. Recovery time trr versus -diF/dt  
Fig. 19. Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 20. Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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