IXFT 10N100 IXFT 12N100
Symbol
gfs
TestConditions
Characteristic Values
TO-268 Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6
10
S
Ciss
Coss
Crss
4000
310
70
pF
pF
pF
td(on)
tr
td(off)
tf
21
33
62 100
32 50
50
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 Ω (External),
Qg(on)
Qgs
Qgd
122 155
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
30
50
45
80
RthJC
0.42 K/W
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
10N100
12N100
10
12
A
A
ISM
Repetitive;
10N100
12N100
40
48
A
A
pulse width limited by TJM
VSD
IF = I , VGS = 0 V,
1.5
V
PulsSe test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
T = 25°C
250 ns
400 ns
TJJ = 125°C
I = IS
-Fdi/dt = 100 A/µs,
QRM
IRM
T = 25°C
1
2
µC
µC
TJJ = 125°C
VR = 100 V
T = 25°C
TJJ = 125°C
10
15
A
A
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
