Advanced Technical Information
HiPerFETTM Power MOSFETs
VDSS
ID25
RDS(on)
ISOPLUS247TM Q CLASS
IXFR 12N100Q 1000V 10 A
IXFR 10N100Q 1000V 9 A
1.05 W
1.20 W
(Electrically Isolated Back Surface)
trr £ 200 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Symbol
TestConditions
MaximumRatings
ISOPLUS 247TM
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
12N100
10N100
12N100
10N100
12N100
10N100
10
9
48
40
12
10
A
A
A
A
A
A
TC = 25°C, Pulse width limited by TJM
TC = 25°C
G = Gate
S = Source
*Patentpending
EAR
TC = 25°C
30
5
mJ
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
V/ns
• SiliconchiponDirect-Copper-Bond
substrate
PD
TC = 25°C
250
W
- High power dissipation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
• Fast intrinsic Rectifier
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 4mA
VGS = ±20 VDC, VDS = 0
1000
2.5
V
V
5.5
±100
nA
Advantages
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
12N100
10N100
1.05
1.2
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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