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3SK131

型号:

3SK131

描述:

MOS场效应[ MOS FIELD EFFECT TRANSISTOR ]

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

66 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
3SK131  
RF AMP. FOR VHF TV TUNER  
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR  
4PIN MINI MOLD  
PACKAGE DIMENSIONS  
FEATURES  
(Unit: mm)  
Suitable for use as RF amplifier in VHF TV tuner.  
Low Crss : 0.05 pF TYP.  
+0.2  
0.3  
2.8  
1.5  
+0.2  
0.1  
High Gps : 23 dB TYP.  
Low NF : 1.3 dB TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
ID  
20  
V
V
8
8
25  
V
5°  
5°  
5°  
5°  
mA  
mW  
C
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
200  
Tch  
125  
Tstg  
55 to +125  
C
PIN CONNECTIONS  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
ELECTRICAL CHARACTERISTICS (TA = 25 C)  
CHARACTERISTIC  
Drain to Source Breakdown Voltage  
Drain Current  
SYMBOL  
BVDSX  
IDSS  
MIN.  
TYP.  
10  
MAX.  
UNIT  
V
TEST CONDITIONS  
20  
VG1S = VG2S = 2 V, ID = 10  
A
7
25  
mA  
V
VDS = 6 V, VG2S = 3 V, VG1S = 0  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
VG1S(OFF)  
VG2S(OFF)  
IG1SS  
2.0  
1.5  
20  
20  
VDS = 8 V, VG2S = 0, ID = 5  
VDS = 8 V VG1S = 0, ID = 5  
A
V
A
nA  
nA  
mS  
VDS = 0, VG1S = 8 V, VG2S = 0  
VDS = 0, VG2S = 8 V, VG1S = 0  
VDS = 6 V, VG2S = 3 V, ID = 10 mA  
f = 1 kHz  
Gate2 Reverse Current  
IG2SS  
Forward Transfer Admittance  
yfs  
22  
28  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Coss  
Crss  
Cps  
NF  
4.0  
2.2  
5.0  
2.9  
0.05  
24  
6.5  
3.7  
pF  
pF  
pF  
dB  
dB  
VDS = 6 V, VG2S = 3 V, ID = 10 mA  
f = 1 MHz  
0.08  
21  
VDS = 10 V, VG2S = 5 V, ID = 10 mA  
f = 200 MHz  
Noise Figure  
1.2  
2.5  
IDSS classification V11 7-13 mA V12 11-19 mA V13 17-25 mA  
Document No. P12449EJ2V0DS00 (2nd edition)  
(Previous No. TC-1508)  
Date Published March 1997 N  
Printed in Japan  
©
1983  
3SK131  
TYPICAL CHARACTERISTICS (TA = 25 C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
20  
10  
VG2 = 3.0 V  
400  
300  
200  
100  
V
G1S = 0 V  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0
25  
50  
75  
100  
125  
0
10  
20  
T
a-Ambient Temperature-°C  
VDS-Drain to Source Voltage-V  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
GATE1 TO SOURCE VOLTAGE  
20  
VDS = 6 V  
VG2S = 5 V  
40  
4 V  
30  
3 V  
2 V  
10  
20  
10  
1 V  
VG2S = 0  
0 V  
0
1.0  
0
1.0  
V
G1S-Gate 1 to Source Voltage-V  
1.0  
0
+1.0  
VG1S-Gate 1 to Source Voltage-V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
V
DS = 6.0 V  
30  
25  
f = 1 MHz  
8.0  
6.0  
4.0  
2.0  
0
V
G1S = 0.05 V  
20  
15  
10  
5
1.0  
0
1.0  
2.0  
3.0  
4.0  
V
V
DS = 6 V  
G2 = 3 V  
V
G2S-Gate 2 to Source Voltage-V  
f = 1.0 kHz  
0
10  
-Drain Current-mA  
20  
I
D
2
3SK131  
OUTPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
INPUT ADMITTANCE (yis  
vs. FREQUENCY  
)
10  
5.0  
4.0  
3.0  
2.0  
V
V
DS2 = 6 V  
G2S = 3 V  
V
DS = 6.0 V  
f = 1.0 MHz  
300 MHz  
I
D
= 10 mA  
V
G1S = 0 V  
200 MHz  
5
0.5 V  
100 MHz  
1.0  
0
1.0  
0
1.0  
2.0  
3.0  
4.0  
0
0
1
2
VG2S-Gate 2 to Source Voltage-V  
gis-Input Conductance-mS  
FORWARD TRANSFER ADMITTANCE (yfs  
vs. FREQUENCY  
)
REVERSE TRANSFER ADMITTANCE (yrs  
vs. FREQUENCY  
)
g
fs-Forward Transfer Conductance-mS  
g
rs-Reverse Transfer Conductance-mS  
100 MHz  
10  
20  
30  
0.1  
0.2  
5  
V
DS = 6 V  
V
DS = 6 V  
V
G2S = 3 V  
V
G2S = 3 V  
I
D
= 10 mA  
I
D
= 10 mA  
300 MHz  
0.1  
0.2  
10  
15  
200 MHz  
200 MHz  
100 MHz  
300 MHz  
OUTPUT ADMITTANCVE (yos  
vs. FREQUENCY  
)
POWER GAIN vs. DRAIN CURRENT  
300 MHz  
5
4
25  
20  
V
DS = 6 V  
V
G2S = 3 V  
I
D
= 10 mA  
200 MHz  
3
2
15  
10  
5
f = 200 MHz  
VDS = 10 V  
VG2S = 5 V  
VDS = 5 V  
VG2S = 3 V  
100 MHz  
1
0
0.5  
os-Output Conductance-mS  
1.0  
0
2
4
6
8
10  
g
I -Drain Current=mA  
D
3
3SK131  
NOISE FIGURE, POWER GAIN vs.  
GATE2 TO SOURCE VOLTAGE  
NOISE FIGURE vs. DRAIN CURRENT  
f = 200 MHz  
f = 200 MHz  
30  
20  
10  
0
VDS = 10 V  
VG2S = 5 V  
VDS = 5 V  
VG2S = 3 V  
V
V
DS = 10 V  
DS = 5 V  
G
ps  
4.0  
4
3
2
3.0  
2.0  
1.0  
NF  
1
0
10  
0
2
4
6
8
10  
1  
0
1
2
3
4
5
6
7
8
I
D-Drain Current=mA  
VG2S-Gate 2 to Source Voltage-V  
TEST CIRCUIT  
V
G2S  
1000 pF  
22 kΩ  
TEST CONDITION  
DS = 10 V, VG2S = 5 V, I  
f = 200 MHz  
1000 pF  
V
D
= 10 mA  
φ
φ
L1  
L2  
L3  
:
:
0.6 mm U.E.W. 7 mm 3T  
0.6 mm U.E.W. 7 mm 3T  
7 pF  
OUTPUT  
7 pF  
L2  
INPUT  
µ
: RFC 2.2  
H
L1  
1000 pF  
50 Ω  
50 Ω  
1000 pF  
15 pF  
200 Ω  
1000 pF  
15 pF  
L3  
22 kΩ  
1000 pF  
1000 pF  
VG1S  
V
DS  
4
3SK131  
[MEMO]  
5
3SK131  
[MEMO]  
6
3SK131  
[MEMO]  
7
3SK131  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  
厂商 型号 描述 页数 下载

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3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

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3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

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3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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