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MXUPS1040E3

型号:

MXUPS1040E3

品牌:

MICROSEMI[ Microsemi ]

页数:

4 页

PDF大小:

261 K

UPS1040e3  
10 A LOW VF Schottky BARRIER RECTIFIER  
S C O T T S D A L E D I V I S I O N  
KEY FEATURES  
DESCRIPTION  
This UPS1040e3 in the Powermite3® package is a high efficiency Schottky rectifier  
that is also RoHS compliant offering high current/power capabilities previously  
found only in much larger packages. They are ideal for SMD applications that  
operate at high frequencies. In addition to its size advantages, the Powermite3®  
package includes a full metallic bottom that eliminates the possibility of solder flux  
entrapment during assembly and a unique locking tab act as an efficient heat path to  
the heat-sink mounting. Its innovative design makes this device ideal for use with  
automatic insertion equipment.  
ƒ Very low thermal resistance package  
ƒ RoHS Compliant with e3 suffix part  
number  
ƒ Guard-ring-die construction for transient  
protection  
ƒ Efficient heat path with Integral locking  
bottom metal tab  
ƒ Low forward voltage  
ƒ Full metallic bottom eliminates flux  
entrapment  
ƒ Compatible with automatic insertion  
ƒ Low profile-maximum height of 1mm  
ƒ Options for screening in accordance with  
MIL-PRF-19500 for JAN, JANTX, and  
JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part  
numbers. For example, designate  
MXUPS1040e3 for a JANTX (consult  
factory for Tin-Lead plating).  
ƒ Optional 100% avionics screening  
available by adding MA prefix for 100%  
temperature cycle, thermal impedance  
and 24 hours HTRB (consult factory for  
Tin-Lead plating)  
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
Rating  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
RMS Reverse Voltage  
28  
10  
V
A
V R (RMS)  
Io  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3 ms Single half sine wave Superimposed  
on Rated Load@ Tc =90ºC  
APPLICATIONS/BENEFITS  
150  
A
IFSM  
ƒ Switching and Regulating Power  
Supplies.  
Storage Temperature  
Junction Temperature  
TSTG  
TJ  
-55 to +150  
-55 to +150  
ºC  
ºC  
ƒ Silicon Schottky (hot carrier) rectifier for  
minimal reverse voltage recovery  
ƒ Elimination of reverse-recovery  
oscillations to reduce need for EMI  
filtering  
ƒ Charge Pump Circuits  
ƒ Reduces reverse recovery loss with low  
IRM  
THERMAL CHARACTERISTICS  
Thermal Resistance  
Junction-to-case (bottom)  
Junction to ambient (1)  
RθJC  
RθJA  
3.2  
65  
ºC/ Watt  
ºC/ Watt  
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print  
ƒ Small foot print  
190 X 270 mils (1:1 Actual size)  
See mounting pad details on pg 3  
Powermite 3™  
MECHANICAL & PACKAGING  
CASE: Void-free transfer molded  
thermosetting epoxy compound  
meeting UL94V-0  
FINISH: Annealed matte-Tin plating  
over copper and readily solderable per  
MIL-STD-750 method 2026 (consult  
factory for Tin-Lead plating)  
POLARITY: See figure (left)  
MARKING: S1040•  
WEIGHT: 0.072 gram (approx.)  
Package dimension on last page  
Tape & Reel option: 16 mm tape per  
Standard EIA-481-B, 5000 on 13” reel  
Copyright © 2007  
6-26-2007 REV E  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UPS1040e3  
10 A LOW VF Schottky BARRIER RECTIFIER  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)  
Parameter  
Symbol Conditions  
Min Typ.  
Max Units  
Forward Voltage (Note 1)  
IF = 8 A , Tj = 25 ºC  
0.45  
0.49  
IF = 8 A , Tj = 125 ºC  
IF = 10 A , Tj = 25 ºC  
0.41  
0.51  
V
VF  
0.47  
Reverse Break Down Voltage  
(Note 1)  
IR = 1 mA  
40  
V
VBR  
Reverse Current (Note1)  
VR = 35 V, Tj = 25ºC  
VR = 35 V, Tj = 100 ºC  
0.1  
12.5  
0.3  
25  
mA  
mA  
IR  
Capacitance  
VR = 4.0V; f = 1 MHZ  
700  
pF  
CT  
Note: 1 Short duration test pulse used to minimize self – heating effect.  
GRAPHS  
Copyright © 2007  
6-26-2007 REV E  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UPS1040e3  
10 A LOW VF Schottky BARRIER RECTIFIER  
S C O T T S D A L E D I V I S I O N  
GRAPHS  
IF(AV), AVERAGE FORWARD CURRENT (A)  
Fig. 5 Forward power Dissipation  
NOTE 1: TA = TC at case bottom where RθJC =2.5º C/W and RθCA = 0º C/W (infinite heat sink).  
NOTE 2: Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode  
pad dimensions 0.25" x 1.0". RθJA in range of 15-30° C/W.  
NOTE 3: Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RθJA in range of 65°C/W. See  
mounting pad dimensions on next page.  
Copyright © 2007  
Microsemi  
Page 3  
6-26-2007 REV E  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
UPS1040e3  
10 A LOW VF Schottky BARRIER RECTIFIER  
S C O T T S D A L E D I V I S I O N  
PACKAGE & MOUNTING PAD DIMENSIONS  
PACKAGING:  
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
NOMINAL  
0.070  
0.173  
0.200  
0.035  
0.160  
0.072  
0.056  
0.044  
0.190  
0.210  
0.038  
0.034  
0.030  
0.030  
NOMINAL  
1.778  
4.392  
5.080  
0.889  
4.064  
1.829  
1.422  
1.118  
4.826  
5.344  
0.965  
0.864  
0.762  
0.762  
E
F
G
H
J
K
L
M
N
P
Copyright © 2007  
6-26-2007 REV E  
Microsemi  
Page 4  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
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