PolarHVTMHiPerFET
Power MOSFET
IXFN 64N50P
VDSS
ID25
= 500 V
= 64 A
RDS(on) ≤ 85 mΩ
≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
PreliminaryDataSheet
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
miniBLOC,SOT-227B(IXFN)
E153432
VGSS
VGSM
Continuous
Transient
30
40
V
V
S
G
ID25
IDM
TC = 25°C
64
A
A
TC = 25°C, pulse width limited by TJM
150
S
IAR
TC = 25°C
64
A
D
EAR
EAS
TC = 25°C
TC = 25°C
70
mJ
J
G = Gate
S = Source
D = Drain
2.0
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
20
V/ns
TC = 25°C
700
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z International standard packages
z Fast recovery diode
Md
Mounting torque
1.13/10 Nm/lb.in.
z Unclamped Inductive Switching (UIS)
rated
VISOL
50/60 Hz
IISOL ≤ 1 mA
Mounting torque
Terminal connection torque (M4)
SOT-227B
t = 1 min
t = 1 s
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
V~
V~
z Low package inductance
- easy to drive and to protect
Advantages
Md
Weight
30
g
z
Easy to mount
Space savings
High power density
Symbol
TestConditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
500
V
V
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
85 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99349(02/05)
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