VCES
IC25
= 1200 V
= 50 A
IXDR 30N120 D1
IXDR 30N120
High Voltage IGBT
with optional Diode
VCE(sat) typ = 2.4 V
ISOPLUSTM package
(Electrically Isolated Back Side)
ISOPLUS 247TM
E153432
C
C
Short Circuit SOA Capability
Square RBSOA
G
G
G
C
E
Isolated Backside*
E
E
IXDR 30N120
IXDR 30N120 D1
G = Gate
C = Collector E = Emitter
*Patent pending
Symbol
Conditions
Maximum Ratings
Features
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
• NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
easy paralleling
TJ = 25°C to 150°C; RGE = 20 kW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
50
30
60
A
A
A
TC = 90°C
- MOS input, voltage controlled
- fast recovery epitaxial diode
Epoxy meets UL 94V-0
TC = 90°C, tp = 1 ms
●
●
Isolated and UL registered E153432
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 47 W
ICM = 50
A
Clamped inductive load, L = 30 mH
VCEK < VCES
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 47 W, non repetitive
10
µs
Advantages
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
PC
TC = 25°C
IGBT
Diode
200
95
W
W
TJ
-55 ... +150
-55 ... +150
°C
°C
• High power density
Tstg
VISOL
50/60 Hz, RMS IISOL £ 1 mA
2500
6
V~
g
TypicalApplications
Weight
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
IC = 1 mA, VCE = VGE
6.5
VCE = VCES
TJ = 25°C
TJ = 125°C
1.5 mA
mA
2.5
2.4
IGES
VCE = 0 V, VGE = ±20 V
IC = 30 A, VGE = 15 V
± 500 nA
VCE(sat)
2.9
V
© 2000 IXYS All rights reserved
1 - 4
