Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 7N90Q
IXFT 7N90Q
VDSS
ID25
RDS(on)
= 900 V
7 A
= 1.5 W
=
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
trr £ 250 ns
TO-247 AD (IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
900
900
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
7
28
7
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-268 (D3) ( IXFT)
EAR
TC = 25°C
20
700
5
mJ
mJ
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G
S
(TAB)
PD
TC = 25°C
180
W
G = Gate
D
= Drain
S = Source
TAB = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10
Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• Internationalstandardpackages
• Low RDS (on)
min.
typ.
max.
• UnclampedInductiveSwitching(UIS)
rated
• MoldingepoxiesmeetUL94V-0
flammabilityclassification
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
900
3.0
V
V
5.0
±100
nA
Advantages
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
• Easy to mount
• Space savings
• Highpowerdensity
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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