HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFM11N80
IXFH/IXFM13N80
800V 11 A 0.95 W
800V 13 A 0.80 W
trr £ 250 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MW
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
11N80
13N80
11
13
A
A
TO-204 AA (IXFM)
TC = 25°C, pulse width limited by TJM
TC = 25°C
11N80
13N80
44
52
A
A
11N80
13N80
11
13
A
A
EAR
TC = 25°C
30
5
mJ
G
D
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
800
2.0
V
V
• DC choppers
• AC motor control
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
• Temperatureandlightingcontrols
• Low voltage relays
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
• Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
11N80
13N80
0.95
0.80
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91528F(7/97)
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