HiPerFETTM Power MOSFETs
Single DieMOSFET
IXFN 34N80
VDSS = 800 V
ID25 = 34 A
RDS(on) = 0.24 W
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
D
trr £ 250 ns
Preliminary data sheet
S
Symbol Test Conditions
MaximumRatings
miniBLOC, SOT-227 B
E153432
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
S
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
34
136
34
A
A
A
D
G = Gate
S = Source
D = Drain
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
600
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
· Internationalstandardpackages
· miniBLOC,withAluminiumnitride
isolation
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
VISOL
50/60 Hz, RMS
IISOL£ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· UnclampedInductiveSwitching(UIS)
rated
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
· Low package inductance
· Fast intrinsic Rectifier
Weight
30
g
Symbol
TestConditions
CharacteristicValues
Applications
(TJ = 25°C, unless otherwise specified)
· DC-DC converters
· Battery chargers
min.
typ.
max.
VDSS
VGS = 0 V, ID = 3 mA
800
V
· Switched-modeandresonant-mode
powersupplies
· DC choppers
VDSS temperature coefficient
0.096
%/K
VGS(th)
VDS = VGS, ID = 8 mA
3.0
5.0
V
· Temperatureandlightingcontrols
VGS(th) temperature coefficient
-0.214
%/K
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200
nA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100
2
mA
mA
· Easy to mount
· Space savings
· High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
0.24
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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