HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
IXFN 280N07
VDSS
ID25 = 280 A
5 mΩ
< 250 ns
=
70 V
RDS(on)
trr
=
D
Avalanche Rated, High dv/dt, Low t
G
rr
Preliminary data sheet
S
S
Symbol
TestConditions
Maximum Ratings
miniBLOC,SOT-227B(IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
70
70
V
V
S
TJ = 25°C to 150°C; RGS = 1 MΩ
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
IL(RMS)
IDM
TC = 25°C,
Chip
capability280
A
D
Terminal current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
100
1120
180
A
A
A
G = Gate
S = Source
D = Drain
IAR
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
EAR
TC = 25°C
TC = 25°C
60
3
mJ
J
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
,
5
V/ns
Features
•Internationalstandardpackages
PD
600
W
•miniBLOC, withAluminiumnitride
TJ
-55 ... +150
150
°C
°C
°C
isolation
•Low RDS (on) HDMOSTM process
TJM
Tstg
-55 ... +150
•Ruggedpolysilicongatecellstructure
•UnclampedInductiveSwitching(UIS)
rated
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
•Lowpackageinductance
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
•FastintrinsicRectifier
Weight
30
g
Applications
• DC-DC converters
• Synchronousrectification
• Batterychargers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• Switched-modeandresonant-mode
• pDoCwecrhospuppeprlsies
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
70
V
V
VGH(th)
2.0
4.0
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 µA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, I = 120A
Pulse test, t ≤D300 µs,
duty cycle d ≤ 2 %
5 mΩ
98555B (1/02)
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