找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN27N80Q

型号:

IXFN27N80Q

描述:

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

110 K

HiPerFETTM  
PowerMOSFETs  
V
I
= 800  
= 27  
V
A
IXFN 27N80Q  
DSS  
D25  
RDS(on) = 320 mΩ  
Q-Class  
Single Die MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
D
G
Preliminarydatasheet  
S
S
miniBLOC,SOT-227B(IXFN)  
Symbol  
TestConditions  
Maximum Ratings  
E153432  
S
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
G
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
D
ID25  
IDM  
IAR  
TC = 25°C  
27  
108  
27  
A
A
A
TC = 25°C, pulse width limited by TJM  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
2.5  
mJ  
J
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
520  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Internationalstandardpackage  
Epoxy meet  
-55 ... +150  
UL94V-0,flammabilityclassification  
miniBLOCwithAluminiumnitride  
isolation  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
IXYS advanced low Qg process  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Lowpackageinductance  
FastintrinsicRectifier  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
DC-DC converters  
Batterychargers  
min.  
typ.  
max.  
Switched-modeandresonant-mode  
power supplies  
VDSS  
VGH(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = ±20 VDC, VDS = 0  
800  
2.5  
V
V
DC choppers  
Temperatureandlightingcontrols  
4.5  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100  
2
µA  
mA  
Easy to mount  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
0.32  
Space savings  
High power density  
© 2001 IXYS All rights reserved  
98813 (04/01)  
IXFN 27N80Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
VDS = 10 V; ID = 0.5 ID25, pulse test  
20  
27  
S
Ciss  
Coss  
Crss  
7600  
750  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
120  
td(on)  
tr  
td(off)  
tf  
20  
28  
50  
13  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
M4 screws (4x) supplied  
RG = 1 (External),  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
Qg(on)  
Qgs  
170  
4
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
7
nCE  
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
Qgd  
65  
G30.12  
H
30.30  
1.186  
1.193  
38.00  
38.23  
1.496  
1.505  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
RthJC  
RthCK  
0.24K/W  
K/W  
K
0.05  
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
U
-0.002  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
IS  
VGS = 0 V  
27  
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
108  
VSD  
IF = IS, VGS = 0 V,  
Note 1  
1.5  
V
trr  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
250  
ns  
µC  
A
QRM  
IRM  
1.3  
8
Note 1:  
Pulse test, t 300 µs, duty cycle d 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

ILSI

IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.178394s