HiPerFETTM
Power MOSFET
IXFN 150N15
VDSS = 150 V
ID25 = 150 A
RDS(on) = 12.5 mW
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions
trr £ 250 ns
miniBLOC, SOT-227 B (IXFN)
E153432
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MW
150
150
V
V
S
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IL(RMS)
IDM
TC = 25°C
150
100
600
150
A
A
A
A
S
Terminal(currentlimit)
TC = 25°C; Note 1
TC = 25°C
D
IAR
G = Gate
S = Source
D = Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TC = 25°C
600
W
· Internationalstandardpackage
· Encapsulating epoxy meets
UL94V-0,flammabilityclassification
· miniBLOC withAluminiumnitride
isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Applications
· DC-DC converters
· Synchronousrectification
· Battery chargers
· Switched-modeandresonant-mode
powersupplies
· DC choppers
· Temperatureandlightingcontrols
· Low voltage relays
Symbol
TestConditions
CharacteristicValues
Typ. Max.
(TJ = 25°C, unless otherwise specified)
Min.
150
2
VDSS
VGS(th)
IGSS
VGS= 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS= ±20V, VGS = 0V
V
4
V
±100
nA
IDSS
VDS= VDSS
VGS= 0 V
TJ = 25°C
TJ = 125°C
100
2
mA
mA
Advantages
· Easy to mount
· Space savings
· High power density
RDS(on) VGS= 10V, ID = 0.5 • ID25
12.5
mW
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98653(9/99)
1 - 2
