IXFR 55N50F
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 10 V; ID = IT
Notes 2, 3
22
33
S
Ciss
Coss
Crss
6700
1250
330
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
24
20
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID =IT
RG = 1 Ω (External)
45
9.6
Qg(on)
Qgs
195
50
nC
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
4 no connection
Qgd
95
Dim.
Millimeter
Inches
RthJC
RthCK
0.30 K/W
K/W
Min.
Max. Min. Max.
0.15
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
A12
b
b12
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
Symbol
TestConditions
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
IS
VGS = 0 V
55
A
A
L
19.81 20.32
L1
3.81
4.32
ISM
Repetitive;
pulse width limited by TJM
220
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
QRM
IRM
1.0
10
µC
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 27.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
