IXFR 44N50Q
IXFR 48N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 10 V; ID = IT
Notes 2, 3
30
45
S
Ciss
Coss
Crss
6400
930
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
220
td(on)
tr
td(off)
tf
33
22
75
10
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External), Notes 2, 3
Qg(on)
Qgs
190
40
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
Qgd
86
nC
0.40 K/W
K/W
Dim.
Millimeter
Inches
Min.
Max. Min. Max.
RthJC
RthCK
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
0.15
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
Symbol
TestConditions
4.32
IS
VGS = 0 V
48
192
1.5
A
A
V
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
ISM
VSD
Repetitive; Note 1
IF = IT, VGS = 0 V, Notes 2, 3
trr
250 ns
QRM
IRM
1.4
10
µC
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IXFR44N50Q: IT = 22 A
IXFR48N50Q: IT = 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
