IXGB 75N60BD1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
PLUS 264 OUTLINE
IC = 60A; VCE = 10 V,
Note1
45
60
S
Cies
Coes
Cres
5300
730
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
190
Qg
248
40
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
76
td(on)
tri
td(off)
tfi
62
57
ns
ns
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
220 400 ns
150 270 ns
VCE = 0.8 VCES, RG = Roff = 5 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
3.3
6
mJ
td(on)
tri
63
70
ns
ns
Inductive load, TJ = 125°C
Eon
td(off)
tfi
IC = IC90, VGE = 15 V
5
mJ
ns
330
270
VCE = 0.8 VCES, RG = Roff = 5 Ω
Remarks: Switching times may
ns
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
6.0
mJ
RthJC
RthCK
0.35 K/W
K/W
0.19
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
VF
Test Conditions
min. typ. max.
IF = 60A, VGE = 0 V,
Note1
TJ = 150°C
TJ = 25°C
1.6
2.5
V
V
IRM
IF = IC90, VGE = 0 V, -diF/dt = 100 A/us
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
2
2.5
175 ns
50 ns
A
trr
35
RthJC
0.65 K/W
Notes:
1. Pulse test, t < 300µs,duty cycle < 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
