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IXGH28N90B

型号:

IXGH28N90B

描述:

HiPerFAST IGBT[ HIPERFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

93 K

HiPerFASTTM IGBT  
VCES  
IC25  
= 900 V  
51 A  
IXGH 28N90B  
IXGT 28N90B  
=
VCE(SAT) = 2.7 V  
Preliminary data sheet  
tfi(typ)  
= 130 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
51  
28  
A
A
A
TC = 110°C  
TO-268 (D3)  
(IXGT)  
TC = 25°C, 1 ms  
120  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 100 mH  
ICM = 56  
@ 0.8 VCES  
A
G
(TAB)  
E
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
International standard packages  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
JEDEC TO-268 surface  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
mountable and JEDEC TO-247 AD  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
l
l
l
Weight  
TO-247 AD  
6
4
g
g
TO-247 SMD  
- drive simplicity  
Applications  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
l
l
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
900  
2.5  
V
Advantages  
Space savings (two devices in one  
5
V
l
package)  
High power density  
Suitable for surface mounting  
Switching speed for high frequency  
applications  
Easy to mount with 1 screw,TO-247  
(isolated mounting screw hole)  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
500  
5
mA  
mA  
l
l
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
l
VCE(sat)  
IC = IC110, VGE = 15 V  
2.2  
2.7  
© 2000 IXYS All rights reserved  
98634B (10/00)  
IXGH 28N90B  
IXGT 28N90B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC110; VCE = 10 V,  
20  
32  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Æ P  
Cies  
Coes  
Cres  
3200  
160  
32  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
100  
18  
150 nC  
28 nC  
70 nC  
e
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min.  
Inches  
Min. Max.  
Max.  
40  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
30  
30  
ns  
ns  
IC = IC110, VGE = 15 V  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
100  
130  
1.2  
170 ns  
220 ns  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
,
,
20.80 21.46  
15.75 16.26  
Eoff  
2
mJ  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
td(on)  
tri  
30  
35  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = IC110, VGE = 15 V  
ÆP 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.3  
280  
190  
2.5  
mJ  
ns  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
TO-268 Outline  
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
TO-247  
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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