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IXGH17N100U1

型号：

IXGH17N100U1

描述：

低VCE （ sat）的IGBT与二极管高速IGBT与二极管[ Low VCE(sat) IGBT with Diode High speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

117 K

下载PDF手册
VCES  
1000 V 34 A 3.5 V  
IXGH 17 N100AU1 1000 V 34 A 4.0 V  
IC25 VCE(sat)  
Low VCE(sat) IGBT with Diode  
High speed IGBT with Diode  
IXGH 17 N100U1  
CombiPacks  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
34  
17  
68  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 82 Ω  
Clamped inductive load, L = 100 µH  
ICM = 34  
@ 0.8 VCES  
A
Features  
PC  
TC = 25°C  
150  
W
l
International standard package  
JEDEC TO-247 AD  
IGBT and anti-parallel FRED in one  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
l
TJM  
Tstg  
package  
-55 ... +150  
2nd generation HDMOSTM process  
Low VCE(sat)  
l
l
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
- for minimum on-state conduction  
losses  
Weight  
6
g
l
l
MOS Gate turn-on  
- drive simplicity  
Fast Recovery Epitaxial Diode(FRED)  
- soft recovery with low IRM  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
l
l
l
BVCES  
VGE(th)  
IC = 4.5 mA, VGE = 0 V  
1000  
2.5  
V
V
l
IC = 500 µA, VCE = VGE  
5.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
500 µA  
mA  
Advantages  
8
l
Saves space (two devices in one  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Easy to mount (isolated mounting  
screw hole)  
Reduces assembly time and cost  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
17N100U1  
17N100AU1  
3.5  
4.0  
V
V
l
91754D (3/96)  
© 1996 IXYS All rights reserved  
IXGH 17N100U1  
IXGH 17N100AU1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; VCE = 10 V,  
6
15  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
1500  
210  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
100  
20  
120 nC  
30 nC  
90 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
60  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
100  
200  
ns  
ns  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
IC = IC90, VGE = 15 V, L = 300 µH,  
V
CE = 0.8 VCES, RG = Roff = 82 Ω  
500 1000 ns  
Remarks: Switching times  
may increase  
for VCE (Clamp) > 0.8 • VCES  
17N100U1  
17N100AU1  
750  
450  
ns  
750 ns  
,
Eoff  
higher TJ or increased RG  
17N100AU1  
3
mJ  
td(on)  
tri  
100  
200  
2.5  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = Roff = 82 Ω  
Eon  
td(off)  
tfi  
mJ  
700 1000 ns  
Remarks: Switching times  
may increase  
17N100U1  
17N100AU1  
1200 2000 ns  
750 1000 ns  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
17N100U1  
17N100AU1  
8
6
mJ  
mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.5  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs  
IRM  
trr  
16  
120  
35  
18  
50  
A
ns  
ns  
VR = 540 V  
TJ =125°C  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C  
RthJC  
1 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH 17N100U1  
IXGH 17N100AU1  
Fig. 1 Saturation Characteristics  
Fig. 2 Output Characterstics  
35  
30  
25  
20  
15  
10  
5
150  
125  
100  
75  
13V  
11V  
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
50  
25  
7V  
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4 Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
TJ = 25°C  
IC = 34A  
IC = 34A  
I
C = 17A  
IC = 17A  
IC = 8.5A  
IC = 8.5A  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
35  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE(th)  
VCE= 10V  
IC = 250µA  
BVCES  
IC = 3mA  
TJ = 25°C  
TJ = 125°C  
TJ = - 40°C  
0
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VCE - Volts  
© 1996 IXYS All rights reserved  
IXGH 17N100U1  
IXGH 17N100AU1  
Fig.7 Gate Charge  
Fig.8 Turn-Off Safe Operating Area  
15  
13  
11  
9
100  
10  
VCE = 800  
IC = 17A  
TJ = 125°C  
I
G = 10mA  
dV/dt < 3V/ns  
1
7
5
0.1  
0.01  
3
1
0
10 20 30 40 50 60 70 80 90 100  
Gate Charge - (nC)  
0
200  
400  
600  
800  
1000  
VCE - Volts  
Fig.9 Capacitance Curves  
2000  
1750  
1500  
1250  
1000  
750  
500  
250  
0
f = 1MHz  
Cies  
Coes  
Cres  
0
5
10  
15  
20  
25  
VCE - Volts  
Fig.10 Transient Thermal Impedance  
1
D=0.5  
D=0.2  
D=0.1  
0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH 17N100U1  
IXGH 17N100AU1  
Fig.11 Maximum Forward Voltage Drop  
Fig.12 Peak Forward Voltage VFR and  
Forward Recovery Time tFR  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
1000  
800  
600  
400  
200  
0
TJ = 125°C  
VFR  
IF =37A  
TJ = 100°C  
t
T = 150°C  
fr  
J
TJ = 25°C  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
100  
200  
300  
400  
500  
600  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.13Junction Temperature Dependence  
off IRM and Qr  
Fig.14 Reverse Recovery Chargee  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4
max.  
IF = 30A  
TJ = 100°C  
VR = 540V  
3
2
1
0
typ.  
IF = 60A  
IRM  
Qr  
IF = 30A  
IF = 15A  
0
40  
80  
120  
160  
1
10  
100  
diF /dt - A/µs  
1000  
TJ - Degrees C  
Fig.15 Peak Reverse Recovery Current  
Fig.16 Reverse Recovery Time  
50  
40  
30  
20  
10  
0
0.8  
0.6  
0.4  
0.2  
0.0  
max.  
IF = 30A  
TJ = 100°C  
max.  
TJ = 100°C  
VR = 540V  
IF = 30A  
VR = 540V  
typ.  
IF = 60A  
IF = 30A  
IF = 15A  
typ.  
IF = 60A  
IF = 30A  
IF = 15A  
200  
400  
600  
0
200  
400  
600  
diF /dt - A/µs  
diF /dt - A/µs  
© 1996 IXYS All rights reserved  
IXGH 17N100U1  
IXGH 17N100AU1  
Fig.17 Diode Transient Thermal resistance junction to case  
1.00  
0.10  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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