IXGH12N100U1
IXGH12N100AU1
Symbol
TestConditions
CharacteristicValues
TO-247 AD (IXGH) Outline
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
gfs
IC = IC90; VCE = 10 V,
6
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
750
120
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1MHz
Qg
65
8
90
20
45
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
24
td(on)
tri
td(off)
tfi
100
200
ns
ns
ns
ns
ns
mJ
mJ
ns
ns
mJ
ns
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
IC = IC90, VGE = 15 V, L = 300 mH
850 1000
800 1000
Min. Max. Min. Max.
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
12N100U1
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
12N100AU1 500 700
,
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Eoff
12N100U1
2.5
1.5
12N100AU1
3.0
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
100
200
1.1
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
Inductive load, TJ = 125°C
E(on)
td(off)
tfi
J
1.0
1.4 0.040 0.055
IC = IC90, VGE = 15 V, L = 300 mH
K
10.8 11.0 0.426 0.433
900
1250
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
12N100U1
12N100AU1 950
,
N
1.5 2.49 0.087 0.102
Eoff
12N100U1
12N100AU1
3.5
2.2
mJ
mJ
RthJC
RthCK
1.25 K/W
K/W
0.25
Reverse Diode (FRED)
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions
Characteristic Values
Min. Typ. Max.
VF
IF =8A, VGE = 0 V,
2.75
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 540 V
6.5
A
ns
ns
TJ = 125°C 120
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
TJ = 25°C
50
60
RthJC
2.5 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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