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IXGT16N170A

型号:

IXGT16N170A

描述:

高压IGBT[ High Voltage IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

97 K

Advance Technical Data  
IXGH 16N170A  
IXGT 16N170A  
VCES  
IC25  
= 1700 V  
16 A  
High Voltage  
IGBT  
=
VCE(sat) = 5.0 V  
tfi(typ)  
=
40 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
16  
8
40  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10Ω  
I
= 40  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
TAB)  
(RBSOA)  
G
C
E
tSC  
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω  
10  
µs  
G = Gate,  
C = Collector,  
TAB = Collector  
E=Emitter,  
PC  
TC = 25°C  
190  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
JEDEC TO-268 and  
JEDEC TO-247 AD  
Md  
Mounting torque (M3)  
(TO-247)  
1.13/10Nm/lb.in.  
300 °C  
z
z
High current handling capability  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
- drive simplicity  
z
z
Rugged NPT structure  
Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z
Capacitor discharge & pulser circuits  
z
AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
z
DC servo and robot drives  
(TJ = 25°C, unless otherwise specified)  
z
min. typ. max.  
DC choppers  
z
Uninterruptible power supplies (UPS)  
z
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
3.0  
V
Switched-mode and resonant-mode  
ICC = 250 µA, VCE = VGE  
5.0  
V
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
50  
µA  
µA  
Note 1 TJJ = 125°C  
750  
Advantages  
z
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
z
Suitable for surface mounting  
z
VCE(sat)  
IC = IC90, VGE = 15 V  
T = 25°C  
TJJ = 125°C  
4.0  
4.8  
5.0  
V
V
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
DS98993(01/03)  
© 2003 IXYS All rights reserved  
IXGH 16N170A  
IXGT 16N170A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = I ; VCE = 10 V  
Note 2 C25  
6
10  
S
P
Cies  
Coes  
Cres  
1700  
83  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
30  
Qg  
Qge  
Qgc  
65  
13  
24  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
IC = IC25, VGE = 15 V  
td(on)  
tri  
td(off)  
tfi  
36  
57  
200  
40  
ns  
ns  
350 ns  
150 ns  
1.5 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
R = 10 Ω, VCE = 0.8 VCES  
NoG te 3  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
0.9  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
38  
59  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = IC25, VGE = 15 V  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Eon  
1.5  
R = 10 Ω, VCE = 0.8 VCES  
NoG te 3  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
td(off)  
200  
6.15 BSC  
tfi  
55  
ns  
Eoff  
1.1  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
Notes:1. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
2. Pulse test, t 300 µs, duty cycle 2 %  
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG.  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
2.1  
.75  
.83  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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