Low VCE(sat) IGBT with Diode
High Speed IGBT with Diode
VDSS
IC25 VCE(sat)
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
1200 V 30 A 3.2 V
1200 V 30 A 3.8 V
Preliminary data
TO-247AD
(IXGH)
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
TAB
IC25
IC90
ICM
TC = 25°C
30
15
60
A
A
A
TO-268
(IXGT)
TC = 90°C
G
TC = 25°C, 1 ms
E
SSOA
VGE= 15 V, TJ = 125°C, RG = 10 W
ICM = 40
A
(RBSOA)
Clampedinductiveload
@0.8 VCES
C (TAB)
PC
TC = 25°C
150
W
G = Gate
E = Emitter
C = Collector
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Md
Mountingtorque
1.13/10 Nm/lb.in.
Features
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
260
6/4
°C
°C
g
• Internationalstandardpackages:
JEDEC TO-247AD & TO-268
• IGBT and anti-parallel FRED in one
package
• MOS Gate turn-on
- drivesimplicity
Maximumtabtemperature
soldering SMD devices for 10s
Weight
TO-247AD/TO-268
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 1 A, VGE = 0 V
1000
2.5
V
V
IC = 250 mA, VCE = VGE
5.0
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
500 mA
Advantages
2
mA
• Saves space (two devices in one
package)
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Reduces assembly time and cost
VCE(sat)
IC
= IC90, VGE = 15 V
15N120BD1
15N120CD1
3.2
3.8
V
V
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98658A(7/00)
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